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Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof

一种相移掩膜、半色调的技术，应用在半色调型相移掩膜坯料领域，能够解决刻蚀速度慢、无法获得高精度图案、上层氟系干式刻蚀刻蚀选择不充分等问题

Inactive Publication Date: 2012-06-20
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0038] However, the lower layer made of tantalum in Conventional Example 4 has insufficient etching selectivity to the upper layer by fluorine-based dry etching.
In the chromium-tantalum alloy of conventional example 5, the etching rate in chlorine-based gas is slow, and high-precision patterns cannot be obtained

Method used

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  • Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof
  • Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof
  • Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～8

[0143] Embodiment 1~8 is corresponding to F 2 A specific example of a half-tone phase shift mask for excimer laser exposure, the substrate uses a synthetic quartz substrate, and the substrate and SiO x N y An etch stop layer is provided between the layers.

[0144] (film formation)

[0145] First, on a synthetic quartz substrate, etch stop layer A layer, and SiO x N y constitute the B layer. In this embodiment, it is manufactured according to the sputtering method. The basic compositions of layers A and B of the double-layer film in each embodiment, the conditions such as target and sputtering gas type, and the film thickness of each layer are shown in Table 1. The respective film thicknesses of the A layer and the B layer are adjusted using the above formula (1) so that the sum of the phase shift amounts of each layer becomes 180° with respect to a wavelength of 157 nm.

[0146] (optical properties)

[0147] Measure the transmittance of the double-layer film that make...

Embodiment 9

[0166] The underlying material was investigated in this example. Table 5 confirms that when using fluorine-based and chlorine-based gases for dry etching, TaZr x (Indicates the inclusion of Ta and Zr, rather than the composition ratio of Ta and Zr. The same below), and the results of the etching characteristics of Zr. Table 6 shows the results of confirming the etching properties of TaAl and TaHf when performing dry etching using fluorine-based and chlorine-based gases. That is, in this example, the dry etching characteristics of a film in which the main material is Ta and materials (Al, Hf, Zr) considered to be related to the effect of the present invention are added are mainly confirmed.

[0167] table 5

[0168]

[0169] Each film material was formed into a film using a sputtering method. When adding materials, the metal sheet of the target material is placed on the Ta target to form a film. Whether or not it was added to the film was confirmed by X-ray photoelectro...

reference example 1

[0174] In order to confirm the addition effect in Example 9, the dry etching characteristics of a Ta single metal film to which the above materials were not added were confirmed as a reference example. As shown in Table 7, the selectivity between the Ta single metal film and the quartz substrate was not sufficient for the fluorine-based gas. The etching conditions of this comparative example are implemented according to Example 9.

[0175] Table 7

[0176]

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PUM

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Abstract

A halftone phase shift mask blank comprising a light transmission portion for allowing exposure light to transmit, a phase shifter portion for shifting the phase of the light transmitted by predetermined quantity simultaneously when a part of the exposure light is transmitted, and a phase shifter film for forming the phase shifter portion, and used for manufacturing a halftone phase shift mask having such optical characteristics that the light transmitted through the light transmission portion and the light transmitted through the phase shifter portion are canceled by each other in the vicinity of a boundary thereof, and capable of maintaining and improving excellent contrast of an exposure light pattern boundary transferred on to a surface of a body to be exposed. The phase shifter film comprises a film mainly consisting of silicon, oxygen and nitrogen, and an etching stopper film formed between the film and a transparent substrate.

Description

[0001] This application is a divisional application, the application number of its parent application: 02823609.2, the filing date: 2002.6.4, the name of the invention: halftone phase shift mask blank, halftone phase shift mask and its manufacturing method technical field [0002] The present invention relates to a half tone (half tone) type phase shift mask blank, a half tone type phase shift mask and a manufacturing method thereof, and in particular to ArF excimer lasers (193nm) and F 2 Excimer laser (157nm) halftone type phase shift mask blank, etc. Background technique [0003] At present, DRAM (Dynamic Random Access Memory, dynamic random access memory, mobile floppy disk) has established a 256Mbit mass production system, and will achieve higher integration from Mbit level to Gbit level in the future. As a result, the design rules of integrated circuits have gradually become finer, and it is only a matter of time before fine patterns with half pitches below 0.10 μm are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/32
Inventor 盐田勇树野泽顺大久保亮三井英明
Owner HOYA CORP
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