Supercharge Your Innovation With Domain-Expert AI Agents!

High reliability NTC thermosensitive resistor and its preparing method

A thermistor, reliability technology, applied in the direction of resistors with negative temperature coefficient, etc., to achieve the effect of improving reliability

Inactive Publication Date: 2007-04-11
莫海声
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] But at present, the resistance value of similar products in China has an annual drift rate of ≥1%.
In some fields (such as medical equipment) that require relatively high temperature control accuracy, it is far from meeting the requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further described below in conjunction with embodiment.

[0021] The following is a glass-encapsulated diode NTC thermistor model HX-MF58GT202F350F, the raw material composition of the chip material is as follows:

[0022] Cobalt nitrate hexahydrate 206 grams;

[0023] 205 grams of 50% manganese nitrate solution;

[0024] 153 grams of ferric nitrate;

[0025] Ammonium bicarbonate 263 grams;

[0026] 26.5% ammonia water 105ml.

[0027] Its preparation method is:

[0028] Step 1: Prepare several raw materials into aqueous solutions, heat to 45°C, mix and stir, let them fully react, and then rinse with deionized water until excess OH is removed - ion.

[0029] The second step: after the reaction product is dried at 100°C, it is placed in a muffle furnace for calcination at 850°C.

[0030] Step 3: Use an isostatic press to press into a cylinder of a certain shape, and sinter it into a dense ceramic body in a high-temperature furnace at 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses a high reliable NTC thermistor and its preparation method, in which, the thermistor is composed of a chip, a glass shell covering the surrounding of the chip and a lead, both sides of the chip are coated with metal electrodes, one end of the lead is fixed on the metal electrode characterizing that the main composition of the chip material is: CoNO3 hexahydrate 20-24%, 50% MnNO3 solution 20-24%, NiNO3 14-18%, ammonium bicarbonate 26-30% and ammonia 10-12%.

Description

technical field [0001] The invention relates to an electronic component and a manufacturing method using analytically pure metal nitrate as a main raw material, in particular to a high-reliability NTC thermistor and a manufacturing method thereof. Background technique [0002] NTC is the abbreviation of Negative Temperature Coefficient, which means a negative temperature coefficient, and generally refers to semiconductor materials or components with a large negative temperature coefficient. The so-called NTC thermistor is a negative temperature coefficient thermistor. NTC thermistor is a semiconductor ceramic element made of high-purity transition metal oxides as the main material. It is made of metal oxides such as manganese, cobalt, nickel and copper, and is manufactured by ceramic technology. These metal oxide materials all have semiconductor properties, because they are completely similar to semiconductor materials such as germanium and silicon in terms of conductivity. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/04
Inventor 莫海声
Owner 莫海声
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com