An organic field effect transistor and its manufacture method

Abstract

The invention relates to an organic field-effect transistor, and relative production. Wherein, said transistor comprises a base plate as grid, an insulated layer on the base plate, a source grid and a leak electrodes on the insulated layer; there is an organic semi-conductor single-crystal micrometer / nanometer material between source and leak electrodes, whose two ends are connected to source and leak electrodes via two distanced metal films; the distance between two metal films is 5-20micrometer. The inventive transistor has high transfer rate and lower threshold voltage. And its production has following advantages that (1), it avoid organic solvent while will damage the nanometer material; (2), it has simple device to avoid radiating and damaging nanometer line by high-energy particles; (3), it can obtain controllable device; (4), it can control the structure of transistor, with better electrode contact.

Description

technical field [0001] The invention relates to an organic field effect transistor and a preparation method thereof. Background technique [0002] Organic field-effect transistors have attracted attention in recent years due to their potential applications in organic / molecular electronics. Organic field-effect transistors mainly include organic semiconductor conductive layers, insulating layers, and source, drain, and gate electrodes. Most of them use organic thin films as the conductive layer. Due to the presence of lattice disorder and grain boundary defects in thin films, the intrinsic properties of organic semiconductors are often masked, and the improvement of device mobility is also limited, and the higher defect concentration in thin films greatly increases the threshold of organic field effect transistors. Voltage. Low mobility and high threshold voltage overshadow the advantages of organic field-effect transistors while limiting their application in circuits. Due...

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Problems solved by technology

However, the mechanical properties of organic crystals are generally poor, and they are easily broken and damaged during ultrasonic dispersion, which limits the use of ultrasonic dispersion

Moreover, the method of ultrasonic dispersion has great randomness, and the size and position of dispersed crystals cannot be artificially controlled.

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