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Method for deeply etching one-dimensional photon crystal based on focusing ion

A technology for one-dimensional photonic crystals and focused ion beams, which is applied in the field of realizing submicron-scale high-aspect-ratio periodic groove structure gratings and periodic one-dimensional photonic crystals. Long cycle and other issues

Inactive Publication Date: 2007-06-20
PEKING UNIV
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  • Description
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  • Application Information

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Problems solved by technology

The common features of various existing methods are that the process technology is complicated, the preparation process is many, the cycle is long, and it is more difficult to realize the laser cavity mirror in the integrated optical path.

Method used

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  • Method for deeply etching one-dimensional photon crystal based on focusing ion
  • Method for deeply etching one-dimensional photon crystal based on focusing ion

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Embodiment Construction

[0023] The preferred embodiment of the present invention is described in more detail below with reference to the accompanying drawings of the present invention.

[0024] In this embodiment, the GaN laser with a center wavelength of 405nm is used as the processing object, and the one-dimensional photonic crystal reflective mirror surface is fabricated by FIB technology as the best example to illustrate the present invention.

[0025] The nitride-based laser diode structure used in the example is a typical edge-emitting semiconductor laser structure, as shown in Figure 1, it is worth pointing out that the structure of Figure 1 can also be replaced by semiconductor samples of other structures, that is, using the present invention to focus ion Beam etching technology also realizes deeply etched one-dimensional photonic crystals on other semiconductor samples. The epitaxial multilayer structure of the semiconductor laser diode core is a traditional "separately confinement" structur...

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Abstract

The invention is concerned with a compact, fast and effective technical step and method to process resonant cavity mirror of laser with GaN group through advanced focusing ionization bundle etching technology. It relates to account and design the material size and fault tolerances request of semiconductor / air reflector with one-dimensional photon crystal structure and offers gist for the selection of FIB machining condition. Carry preceding provision about the semiconductor laser diode for electricity contact and mechanism stability, and confirm appropriate FIB process condition and design reasonable process sequence to carry process. This relates to selecting the size of flow to ionization bundle, selecting the material and thickness of deposit protective seam, design assistant etching groovy and process, select in amplificatory multiple and design the etching figure, the etching condition and etching post-processed method of semiconductor / air configuration molding.

Description

technical field [0001] The invention belongs to the field of optoelectronic information science and technology, and specifically relates to a manufacturing scheme and technology of semiconductor photonic crystals, that is, a method and technology for preparing semiconductor / air alternating periodic one-dimensional photonic crystals based on focused ion beam technology. In particular, the method for realizing submicron-scale high aspect ratio periodic groove structure gratings is also used to solve the difficulties in preparing GaN-based laser diodes and other short-cavity semiconductor laser cavity mirrors, and to develop integrated high aspect ratio micro gratings and An advanced approach for future optical integrated circuits. Background technique [0002] Focused ion beam (FIB) etching is an advanced dry etching technology that only appeared in the 1990s. FIB technology can realize patterned etching and patterned induced deposition of ion beams. Its main functions includ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/3065H01L33/00H01S5/10H01S5/22
Inventor 徐军章蓓张振生代涛
Owner PEKING UNIV
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