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Gas measuring method based on semiconductor laser moding characteristics and sensor therefor

A gas measurement and laser technology, which is applied in color/spectral characteristic measurement, scattering characteristic measurement, etc., can solve the problems of difficult to quickly perform, change the temperature of the heat sink, affect the stability of the mode characteristics, etc. integrated effect

Inactive Publication Date: 2010-04-07
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For semiconductor lasers, in TDLAS applications, changing the driving current continuously makes the driving circuit very complicated on the one hand, and affects the stability of its mode characteristics on the other hand; on the one hand, it is not easy to change the heat sink temperature quickly, and on the other hand There is also a problem with stability
For external cavity tuning, on the one hand, the optical path is complicated, and on the other hand, it is difficult to guarantee the stability and reliability in field applications
These all limit the generalization of the TDLAS method

Method used

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  • Gas measuring method based on semiconductor laser moding characteristics and sensor therefor
  • Gas measuring method based on semiconductor laser moding characteristics and sensor therefor

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Embodiment

[0029] Embodiment: Gas concentration measurement based on semiconductor laser mode hopping characteristics

[0030] Measurement implementation steps:

[0031] 1. The mid-infrared laser is an F-P Fabry-Perot cavity antimonide multi-quantum well laser that works continuously at room temperature. The laser chip is sintered with indium on the heat sink of the TO3 laser tube shell. The wire leads the positive electrode to one pin, and the other pin connected to the shell shell is the negative electrode of the laser. The lasing wavelength of the laser is about 2 microns, the driving current is about 200mA, and the driving voltage is about 1V.

[0032] 2. The TO3 packaged mid-infrared laser is installed in the semiconductor laser temperature control component with semiconductor thermoelectric temperature control element and thermistor temperature measurement element. The two leads of the laser and the four leads of the temperature control element and thermistor are respectively used...

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Abstract

The gas measurement and application sensor based on semiconductor laser double mode feature uses target gas to generate laser with certain wave length to absorb feature gas intensity measurement, alsousing target gas as the reference signal to offset other consumption and waving effect for the light transmission feature with certain wave length generated by the same laser. The core of the gas sensor is a semiconductor laser and a photoelectric detector, suitable for all kinds of gas light path being simple, small and integrated. It is of good versatility.

Description

technical field [0001] The invention relates to a gas measurement method based on the mode-hopping characteristics of semiconductor lasers. More specifically, the invention provides a gas sensing solution that utilizes the mode-hopping characteristics of semiconductor lasers to generate absorption and reference laser signals, including laser drive, A series of special methods such as mode-hopping wavelength control, absorption and reference signal extraction and processing. The invention belongs to the technical fields of semiconductor optoelectronic devices, signal processing and gas sensing. Background technique [0002] Since the invention of the semiconductor laser in the 1960s, its structure has developed from a simple homojunction to a heterojunction, quantum well, distributed feedback, surface emission, and quantum cascade, etc., and its basic structure has also changed from bipolar to Expanding to the monopolar type, the lasing wavelength is extended from the near-i...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/25G01N21/49
Inventor 张永刚李爱珍齐鸣封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI