Quartz component for plasma processing apparatus and restoring method thereof

a plasma processing apparatus and component technology, applied in the field of plasma processing technique, can solve the problems of plasma damage, damage to components, and inability to completely eliminate and none of the aforementioned materials can solve the problem of plasma damag

Inactive Publication Date: 2004-09-09
KAWASAKI MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In dry etching techniques, however, components within the chamber of a plasma processing apparatus are often damaged due to their exposure to the plasma.
In particular, a dry etching apparatus for etching silicon oxide, which requires high-energy ions, presents a serious problem in that it damages the components.
However, none of the aforementioned materials can completely eliminate the problem of plasma damage.
In the event that the user uses a plasma processing apparatus, including the chamber components, beyond their predetermined duration of use, the damaged components may create a problem of, for example, unstable

Method used

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  • Quartz component for plasma processing apparatus and restoring method thereof
  • Quartz component for plasma processing apparatus and restoring method thereof
  • Quartz component for plasma processing apparatus and restoring method thereof

Examples

Experimental program
Comparison scheme
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first embodiment

[0034] First Embodiment

[0035] Description will be made below regarding a first exemplary embodiment according to this invention.

[0036] FIG. 1 is a schematic cross-sectional diagram of a plasma processing apparatus for performing dry etching according to an exemplary embodiment of this invention. As shown in FIG. 1, the plasma processing apparatus 10 performs etching using radio-frequency (RF) plasma. The plasma processing apparatus 10 has a parallel-plate-electrode configuration with the electrodes facing one another across a narrow gap.

[0037] The processing chamber 12 accommodates a silicon wafer W to be processed, and a vacuum of around 10.sup.-6 Torr (around 10.sup.-4 Pa) can be established. The chamber 12 includes an upper electrode 14 at the upper middle thereof and a lower electrode 16 at the lower middle thereof. The upper electrode 14 is connected to a gas inlet 13 for introducing the etching gas. The lower electrode 16 has an electrostatic chuck 17 for mounting the wafer W ...

second embodiment

[0118] Second Embodiment

[0119] Next, description will be made regarding a method for performing a cycle of use and restoration of a quartz component according to various exemplary embodiments of this invention.

[0120] FIG. 6 is a flowchart that shows a flow of a cycle of use and restoration according to various exemplary embodiments of this invention, and FIGS. 7 and 8 are longitudinal cross-sectional diagrams of a quartz component that is used during the cycle of use and restoration according to various exemplary embodiments.

[0121] According to various exemplary embodiments, the first time, a conventional focus ring having a generally flat upper surface (main surface) is used. After processing a number of wafers W, a first time restoration is performed on the focus ring such that the upper surface becomes flat for its second time use.

[0122] After processing a number of wafers W, a second restoration is performed. This time, restoration is performed so that the focus ring is formed w...

example

[0158] Description will be made below with reference to the drawings regarding the operation of an exemplary plasma processing apparatus according to this invention. The same plasma processing apparatus as shown in FIG. 1 is used.

[0159] In this example, split-coupling method for applying RF electric power to both the upper and lower electrodes was employed. In this example, as shown in FIGS. 2 and 3, quartz components (focus ring and shield ring), each having a main surface with a ridge in the shape of a circle are used.

[0160] The first region, or the ridged region, was formed with a width of 35 mm around the inner perimeter, and the main surface was divided into the first region and the second region separated in height by an offset with a height of 1 mm. Furthermore, a beveled portion having a rounded corner of 2R (2 mm in radius) is formed on the inner perimeter of the mounting surface (lower surface) of the focus ring. Dry etching is performed for a silicon-dioxide film using th...

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Abstract

The main surface of a quartz component is divided by an offset into a first region having a larger height around an inner perimeter and a second region adjacent to the outer perimeter of the first region. Repeated restoration of a damaged component by forming a bulge on the first region and machining the bulge to make a flat surface while maintaining the offset enables long term use of the component.

Description

[0001] This invention was first described in Japanese Patent Application No. 2003-55620, which is hereby incorporated by reference in its entirety.[0002] 1. Field of Invention[0003] This invention relates to a plasma processing technique for manufacturing semiconductor devices, and particularly to a quartz component employed in plasma processing apparatus. This invention also relates to a method for restoring the quartz component.[0004] 2. Description of Related Art[0005] Plasma processes, such as dry etching, are widely employed in manufacturing semiconductor devices. For example, etching is generally performed using a reactive gas activated by plasma. In dry etching techniques, however, components within the chamber of a plasma processing apparatus are often damaged due to their exposure to the plasma. In particular, a dry etching apparatus for etching silicon oxide, which requires high-energy ions, presents a serious problem in that it damages the components.[0006] The plasma cha...

Claims

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Application Information

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IPC IPC(8): H01J37/32H01L21/3065H01L21/00H01L21/683
CPCH01L21/67069H01J37/32623Y10S438/905
Inventor SUZUKI, KATSUNORINAKAMURA, KENJI
Owner KAWASAKI MICROELECTRONICS
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