Non-volatile flash memory

Abstract

A method of operating a non-volatile memory cell, wherein the non-volatile memory cell includes a word line, a first bit line, and a second bit line, the method includes programming the memory cell that includes applying a high positive bias to the first bit line, applying a ground bias to the second bit line, and applying a high negative bias to the word line, wherein positively-charged holes tunnel through the dielectric layer into the trapping layer.

Description

DESCRIPTION OF THE INVENTION [0001] 1. Field of the Invention [0002] This invention is in general related to a flash memory, and more particularly, to a novel flash memory cell, and the data patterns and sensing scheme thereof. [0003] 2. Background of the Invention [0004] Memory devices for non-volatile storage of information have been widely in use. Examples of such memory devices include read only memory (ROM), programmable ROM (PROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), and flash EEPROM. [0005] A flash memory generally refers to a flash EEPROM, which may be erased in blocks of data instead of one byte at a time. Many modern PCs have their BIOS stored on a flash memory chip so that the BIOS can easily be updated if necessary. Such a BIOS is sometimes called a flash BIOS. Flash memory is also popular in devices such as modems because a flash memory allows these devices to be updated to support, for example, new protocols as they becom...

AI Technical Summary

Benefits of technology

[0014] It is therefore an object of the present invention to provide a novel flash memory, a novel programming method and sensing scheme thereof, with a low power consumption, reduced leakage problems, and simple process.

Problems solved by technology

However, certain problems are associated with a conventional flash memory, such as high power consumption, program and read disturbances.

High power consumption is due to high program and erasure voltages required to induce electron tunneling for program and erase operations.

A disturbance in a flash memory array generally refers to a phenomenon when one selected cell in the memory array is being read or programmed, another programmed memory cell sharing the same word line or bit line may experience current leakage caused by electron tunneling of the selected cell, and a loss of electrons stored in the floating gate may result in a change of status from “programmed” to “erased”.

A lower threshold voltage will result in a higher leakage current.

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