Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- MICRON TECH INC
- Publication Date
- 2005-12-29
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
FIELD OF THE INVENTION
[0001] This invention relates to methods of forming a metal oxide layer on a substrate using one or more precursor compounds that include one or more organo-amine precursor compounds (e.g., alkylamine or alkylimino-alkylamine precursor compounds) with one or more organo-oxide precursor compounds (e.g., alkoxide or oxo-alkoxide) precursor compounds during a vapor deposition process. The precursor compounds and methods are particularly suitable for the formation of a metal oxide layers on semiconductor substrates or substrate assemblies. BACKGROUND OF THE INVENTION
[0002] The continuous shrinkage of microelectronic devices such as capacitors and gates over the years has led to a situation where the materials traditionally used in integrated circuit technology are approaching their performance limits. Silicon (i.e., doped polysilicon) has generally been the substrate of choice, and silicon dioxide (SiO2) has frequently been used as the dielectric material with si...