Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides

Abstract

A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposit ion process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.

Description

FIELD OF THE INVENTION [0001] This invention relates to methods of forming a metal oxide layer on a substrate using one or more precursor compounds that include one or more organo-amine precursor compounds (e.g., alkylamine or alkylimino-alkylamine precursor compounds) with one or more organo-oxide precursor compounds (e.g., alkoxide or oxo-alkoxide) precursor compounds during a vapor deposition process. The precursor compounds and methods are particularly suitable for the formation of a metal oxide layers on semiconductor substrates or substrate assemblies. BACKGROUND OF THE INVENTION [0002] The continuous shrinkage of microelectronic devices such as capacitors and gates over the years has led to a situation where the materials traditionally used in integrated circuit technology are approaching their performance limits. Silicon (i.e., doped polysilicon) has generally been the substrate of choice, and silicon dioxide (SiO2) has frequently been used as the dielectric material with si...

AI Technical Summary

Benefits of technology

The present invention provides methods for vapor depositing metal oxide layers on a substrate using precursor compounds of the formula M1q(O)x(OR1)y and M2(NR2)w(NR3R4)z. These methods do not require the use of water or a strong oxidizer, reducing the likelihood of producing an undesirable interfacial oxide layer between the desired metal oxide layer and the substrate. The methods can be used in chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes. The invention also provides precursor compositions and a vapor deposition apparatus for use in these methods. The technical effects of the invention include reducing the likelihood of producing an undesirable interfacial oxide layer and improving the quality of the metal oxide layer.

Problems solved by technology

The continuous shrinkage of microelectronic devices such as capacitors and gates over the years has led to a situation where the materials traditionally used in integrated circuit technology are approaching their performance limits.

However, when the SiO2 layer is thinned to 1 nm (i.e. a thickness of only 4 or 5 molecules), as is desired in the newest micro devices, the layer no longer effectively performs as an insulator due to the tunneling current running through it.

But vapor deposition processes typically involve the co-reaction of reactive metal precursor compounds with an oxygen source such as oxygen or water, either of which can cause formation of an undesirable SiO2 interfacial layer.

However, undesirable chlorine residues can also be formed.

Furthermore, zirconium and hafnium alkyls are generally unstable and not commercially available.

They would also likely leave carbon in the resultant films.

Images