Apparatus for servicing a plasma processing system with a robot

Abstract

A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates in general to substrate manufacturing technologies and in particular to an apparatus for servicing a plasma processing system with a robot. [0002] In the processing of a substrate, e.g., a semiconductor wafer or a glass panel such as one used in flat panel display manufacturing, plasma is often employed. As part of the processing of a substrate (chemical vapor deposition, plasma enhanced chemical vapor deposition, physical vapor deposition, etc.) for example, the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit. The substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon. [0003] In an exemplary plasma process, a substrate is coated with a thin film of hardened emulsion (such as a photoresist mask) prior to etching. Areas of the harden...

AI Technical Summary

Benefits of technology

[0017] The invention relates, in another embodiment, to a robot apparatus for a plasma processing system including a set of plasma chamber surfaces and a docking port. The apparatus includes a jointed arm coupled to the plasma processing system, and further configured to substantially clean the set of plasma chamber surfaces, wherein the jointed arm has at least five degrees of freedom, and a tool coupled to the jointed arm. The method also includes a computer coupled to the plasma processing system, wherein the computer is further configured to execute a set of cleaning procedures, wherein when the set of cleaning procedures is executed, the set of plasma chamber surfaces is substantially cleaned.

Problems solved by technology

In addition, servicing a plasma processing system may also expose an operator to hazardous duty (i.e., exposure to toxic gases or high temperatures, lifting heavy parts, etc.).

However, non-volatile byproducts will tend to be deposited on exposed surfaces within the plasma chamber or in the vacuum system.

The addition of metallic atoms from any of the sources mentioned above will often exacerbate the cleaning problem by formation of metallic, metal-organic compounds or metal oxides or mixtures thereof.

In addition, when these non-volatile byproducts eventually flake, they may subsequently increase the susceptibility of substrate defects, reduce the mean time between cleaning (MTBC), reduce yield, lead to unacceptable atomic surface contamination on the substrate, etc.

In operation, since substantially removing the byproducts may be time consuming, a plasma chamber is generally substantially cleaned only when, or preferably just before, particle contamination levels reach unacceptable levels, when the plasma processing system must be opened to replace a consumable structure (e.g., edge ring, optical access windows, etc.), or as part of scheduled preventive maintenance (PM).

However, customers may become complacent, or may instead only focus on maximizing equipment production time, and not on the performance of a thorough cleaning, which may amount to many thousands of dollars per hour in lost production time.

For examples, operators who are not properly monitored can create problems by modifying the cleaning method, such as by eliminating steps, doing a less than thorough job in cleaning deposit adhesion or attempting to improve the procedure without verifying compatibility or effectiveness with the recommended processes.

Subsequently, incomplete or incompatible cleaning can cause the plasma processing system to fail particle checks during substrate processing re-qualification or after processing has resumed, requiring additional unplanned maintenance and downtime.

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