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Apparatus for servicing a plasma processing system with a robot

a plasma processing system and robot technology, applied in the direction of cleaning processes and apparatus, basic electric elements, electric discharge tubes, etc., can solve the problems of exacerbate the cleaning problem, non-volatile byproducts tend to tend to the plasma processing system, and expose the operator to hazardous duties

Inactive Publication Date: 2006-09-28
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0074] Advantages of the invention include an apparatus for servicing a plasma processing system with a robot. Additional advantages include substantially removing human error and variability; lowering MTTC (mean time between cleaning) and MTTR (mean time to replacement) post clean; allowing to use of highly effective cleaning materials that would normally be too dangerous for an operator; enabling quick service of parts with large number of bolts, especially when required to torque to spec; enabling the handling contaminated and hot parts; enabling the removal of parts with potential particulate formation if exposed to air; enabling handling parts that are too heavy or cumbersome for single individual (reduce cost or enable larger parts changing); enabling precision placement of gravity supported parts (e.g., tall tightly toleranced concentric tubes with large connecting radii (focus rings), etc.); reducing the chipping of delicate parts often a problem during installation; and enabling well controlled release of changed procedures over entire fab (or controlled release on specific modules).

Problems solved by technology

In addition, servicing a plasma processing system may also expose an operator to hazardous duty (i.e., exposure to toxic gases or high temperatures, lifting heavy parts, etc.).
However, non-volatile byproducts will tend to be deposited on exposed surfaces within the plasma chamber or in the vacuum system.
The addition of metallic atoms from any of the sources mentioned above will often exacerbate the cleaning problem by formation of metallic, metal-organic compounds or metal oxides or mixtures thereof.
In addition, when these non-volatile byproducts eventually flake, they may subsequently increase the susceptibility of substrate defects, reduce the mean time between cleaning (MTBC), reduce yield, lead to unacceptable atomic surface contamination on the substrate, etc.
In operation, since substantially removing the byproducts may be time consuming, a plasma chamber is generally substantially cleaned only when, or preferably just before, particle contamination levels reach unacceptable levels, when the plasma processing system must be opened to replace a consumable structure (e.g., edge ring, optical access windows, etc.), or as part of scheduled preventive maintenance (PM).
However, customers may become complacent, or may instead only focus on maximizing equipment production time, and not on the performance of a thorough cleaning, which may amount to many thousands of dollars per hour in lost production time.
For examples, operators who are not properly monitored can create problems by modifying the cleaning method, such as by eliminating steps, doing a less than thorough job in cleaning deposit adhesion or attempting to improve the procedure without verifying compatibility or effectiveness with the recommended processes.
Subsequently, incomplete or incompatible cleaning can cause the plasma processing system to fail particle checks during substrate processing re-qualification or after processing has resumed, requiring additional unplanned maintenance and downtime.

Method used

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Embodiment Construction

[0027] The present invention will now be described in detail with reference to a few preferred embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and / or structures have not been described in detail in order to not unnecessarily obscure the present invention.

[0028] While not wishing to be bound by theory, it is believed by the inventor herein that a robot device can perform a set of service procedures on a plasma processing system. As previously described, in the normal course of operation, a plasma processing system may need to be serviced with a set of pre-defined service procedures. For example, the plasma chamber may need to be cleaned, ...

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Abstract

A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates in general to substrate manufacturing technologies and in particular to an apparatus for servicing a plasma processing system with a robot. [0002] In the processing of a substrate, e.g., a semiconductor wafer or a glass panel such as one used in flat panel display manufacturing, plasma is often employed. As part of the processing of a substrate (chemical vapor deposition, plasma enhanced chemical vapor deposition, physical vapor deposition, etc.) for example, the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit. The substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon. [0003] In an exemplary plasma process, a substrate is coated with a thin film of hardened emulsion (such as a photoresist mask) prior to etching. Areas of the harden...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B25J18/00
CPCB08B1/00B08B9/00B25J5/00Y10T29/49723H01J37/32862H01L21/67751H01J37/32743B08B1/10B08B1/143B25J18/00
Inventor BAILEY, ANDREW D. III
Owner LAM RES CORP
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