Nitride-based transistors and fabrication methods with an etch stop layer

a technology of nitride-based transistors and fabrication methods, applied in the field of semiconductor devices, can solve the problems of affecting device operation, damage to the underlying barrier layer(s), and not being well suited to higher power and/or high frequency applications

Inactive Publication Date: 2007-01-25
CREE INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] Some embodiments of the present invention provide III-nitride based transistors and methods of making the same that utilize an etch stop layer to pr

Problems solved by technology

These, more familiar, semiconductor materials may not be well suited for higher power and/or high frequency applications, however, because of their relatively small bandgaps (e.g., 1.12 eV for Si and 1.42 for GaAs at room temperature) and/or relatively small breakdown

Method used

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  • Nitride-based transistors and fabrication methods with an etch stop layer
  • Nitride-based transistors and fabrication methods with an etch stop layer
  • Nitride-based transistors and fabrication methods with an etch stop layer

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Embodiment Construction

[0024] The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. As used herein the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0025] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be furt...

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Abstract

A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

Description

FIELD OF THE INVENTION [0001] The present invention relates to semiconductor devices and in particular relates to transistors, such as high electron mobility transistors (HEMT), that incorporate nitride-based active layers and a recessed gate structure, and methods of fabricating same. BACKGROUND [0002] Materials such as silicon (Si) and gallium arsenide (GaAs) have found wide application in semiconductor devices for lower power and (in the case of Si) lower frequency applications. These, more familiar, semiconductor materials may not be well suited for higher power and / or high frequency applications, however, because of their relatively small bandgaps (e.g., 1.12 eV for Si and 1.42 for GaAs at room temperature) and / or relatively small breakdown voltages. [0003] In light of the difficulties presented by Si and GaAs, interest in high power, high temperature and / or high frequency applications and devices has turned to wide bandgap semiconductor materials such as silicon carbide (2.996...

Claims

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Application Information

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IPC IPC(8): H01L31/00
CPCH01L29/2003H01L29/42316H01L29/66431H01L29/7787H01L29/66462H01L29/778H01L29/802H01L29/432H01L2924/13064
Inventor SHEPPARD, SCOTT T.MACKENZIE, ANDREW K.ALLEN, SCOTT T.SMITH, RICHARD P.
Owner CREE INC
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