(Al, Ga, In) N-based compound semiconductor and method of fabricating the same

US20070074651A1Inactive Publication Date: 2007-04-05SEOUL OPTO DEVICE CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
SEOUL OPTO DEVICE CO LTD
Publication Date
2007-04-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

Disclosed are a (Al, Ga, In) N-based compound semiconductor device and a method of fabricating the same. The (Al, Ga, In) N-based compound semiconductor device of the present invention comprises a substrate; a (Al, Ga, In) N-based compound semiconductor layer grown on the substrate; and an electrode formed of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the (Al, Ga, In) N-based compound semiconductor layer. Further, the method of fabricating the (Al, Ga, In) N-based compound semiconductor device comprises the steps of growing a P layer including P type impurities in a growth chamber; discharging hydrogen and a hydrogen source gas in the growth chamber; lowering the temperature of the (Al, Ga, In) N-based compound semiconductor with the P layer formed thereon to such an extent that it can be withdrawn to the outside from the growth chamber; withdrawing the (Al, Ga, In) N-based compound semiconductor from the growth chamber; and forming an electrode of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the P layer. According to the present invention, it is possible to sufficiently secure P type conductivity and obtain good ohmic contact characteristics without performing an annealing process. And, no ftrther annealing is necessary when Pt, Pd, Au electrode are used.
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Description

BACKGROUND OF THE INVENTION

[0001] The present invention relates to Aluminum (Al), Gallium (Ga), Indium (In) N-based compound semiconductor device and a method of fabricating the same, and more particularly, to a (Al, Ga, In) N-based compound semiconductor device comprising a (Al, Ga, In) N-based compound semiconductor layer (P layer) including P type impurities and a transparent electrode provided on the P layer, and a method of fabricating the (Al, Ga, In) N-based compound semiconductor device.

[0002] A (Al, Ga, In) N-based compound semiconductor is applied, for example, to a compound semiconductor device such as a light emitting diode (LED) or a laser diode (LD). FIG. 1 is a cross-sectional view schematically showing a conventional (Al, Ga, In) N-based compound semiconductor device.

[0003] Referring to FIG. 1, a (Al, Ga, In) N-based compound semiconductor layer (N layer) 13 including N type impurities, an active layer 15 and a (Al, Ga, In) N-based compound semiconductor layer (P ...

Claims

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