Integrated circuit device, system, and method of fabrication

a technology of integrated circuits and fabrication methods, applied in the field of integrated circuits, can solve the problems of increasing the cost of lithography. and other fabrication processes and tools, and reducing or eliminating the effect of optical proximity correction
US20090321830A1Inactive Publication Date: 2009-12-31CARNEGIE MELLON UNIV
22 Cites 201 Cited by

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
CARNEGIE MELLON UNIV
Publication Date
2009-12-31
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A semiconductor device, comprising a first semiconductor portion having a first end, a second end, and a slit portion, wherein the width of the slit portion is less than the width of at least one of the first end and the second end; a second portion that is a different material than the first semiconductor portion, a third portions that is a different material than the first semiconductor portion, wherein the second and third portions are on opposite sides of the slit portion, and at least three terminals selected from a group consisting of a first terminal connected to the first end, a second terminal connected to the second end, a third terminal connected to the second portion, and a fourth terminal connected to the third portion.
Need to check novelty before this filing date? Find Prior Art

Description

FIELD OF THE INVENTION

[0001] The present invention is directed generally to integrated circuits and, more specifically, to methods of fabricating integrated circuits, devices and systems for fabricating integrated circuits and other devices and systems, and devices and systems which are formed by, or which utilize, components or other parts which are formed by or in accordance with the present invention.BACKGROUND OF THE INVENTION

[0002] The fabrication of integrated circuits is typically done by building successive layers on top of each other. These layers are built on or in an underlying substrate, such as single crystal silicon or an electrical insulator. When the substrate is an electrical insulator, such as sapphire, the fabrication techniques and resulting devices are often referred to as “silicon on insulator” or “semiconductor on insulator”, which are collectively called “SOI”.

[0003] Many process steps are typically involved in semiconductor fabrication including deposition, oxi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More