Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hardmask composition having antireflective properties and method of patterning material on substrate using the same

a technology of antireflective properties and compositions, applied in the field of hardmask compositions for lithography, can solve the problems of resist not providing resistance to subsequent etching, difficult application of conventional hardmask materials to substrates, and further patterning may be required, so as to minimize the reflectivity between resists and underlying layers, the effect of high etch selectivity

Active Publication Date: 2011-11-10
CHEIL IND INC
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012]It is therefore a feature of an embodiment to provide a hardmask composition that exhibits high etch selectivity, is sufficiently resistant to multiple etching, and minimizes the reflectivity between a resist and an underlying layer.

Problems solved by technology

However, since many portions of the imaging layer are removed during etching of the ARC after patterning, patterning may be further required in the subsequent etching operation.
That is, in some lithographic imaging processes, the resist does not provide resistance to the subsequent etching operation to an extent sufficient to effectively transfer the desired pattern to a layer underlying the resist.
Conventional hardmask materials are difficult to apply to substrates.
However, these methods not only necessitate the use of expensive equipment or the introduction of advanced techniques but also involve relatively complicated processes, thus incurring considerable production costs of devices.
Numerous technical difficulties remain in patterning relatively thick underlying layers by dry etching.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hardmask composition having antireflective properties and method of patterning material on substrate using the same
  • Hardmask composition having antireflective properties and method of patterning material on substrate using the same
  • Hardmask composition having antireflective properties and method of patterning material on substrate using the same

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

Synthesis of terpolymer of 9,9′-bishydroxynaphthylfluorene, 1-naphthol and 9,10-bismethoxymethylanthracene

[0094]450.5 g (1.0 mol) of 9,9′-bishydroxynaphthylfluorene, 144.2 g (1.0 mol) of 1-naphthol, 3.1 g (0.02 mol) of diethyl sulfate and 350 g of propylene glycol monomethyl ether were completely dissolved with stirring in a 3 L three-neck flask equipped with a mechanical agitator and a condenser while maintaining the temperature of the reactor at 100° C.

[0095]10 minutes after the dissolution, 532.7 g of (2.0 mol) of 9,10-bismethoxymethylanthracene was dropped into the solution, and then the resulting mixture was allowed to react at 120° C. for 15 hours. To the reaction mixture was added 2.98 g (0.02 mol) of triethanolamine as a neutralizing agent to quench the reaction.

[0096]After completion of the reaction, a water / methanol mixture was used to remove the acid from the reaction mixture, and methanol was used to remove low-molecular weight compounds containing the oligomers and mono...

synthesis example 2

Synthesis of terpolymer of 9,9′-bishydroxynaphthylfluorene, 1-hydroxypyrene and 1,4-bismethoxymethylbenzene

[0097]The procedure of Synthesis Example 1 was repeated, except that 218.3 g (1 mol) of 1-hydroxypyrene was added instead of 144.2 g of 1-naphthol, and 332.9 g (2 mol) of 1,4-bismethoxymethylbenzene was added instead of 532.7 g of (2.0 mol) of 9,10-bismethoxymethylanthracene, yielding the copolymer of Formula 7:

[0098]The molecular weight and the polydispersity of the copolymer were measured by gel permeation chromatography (GPC) in tetrahydrofuran. As a result, the copolymer was found to have a molecular weight of 11,000 (n=10, m=11) and a polydispersity of 2.2.

synthesis example 3

Synthesis of terpolymer of 9,9′-bishydroxynaphthylfluorene, phenol and formaldehyde

[0099]The procedure of Synthesis Example 1 was repeated, except that 94.1 g (1.0 mol) of phenol was added instead of 144.2 g of 1-naphthol, and 60.1 g (2 mol) of formaldehyde was added instead of 532.7 g of (2.0 mol) of 9,10-bismethoxymethylanthracene, yielding the copolymer of Formula 8:

[0100]The molecular weight and the polydispersity of the copolymer were measured by gel permeation chromatography (GPC) in tetrahydrofuran. As a result, the copolymer was found to have a molecular weight of 10,000 (n=8, m=8) and a polydispersity of 1.8.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthsaaaaaaaaaa
wavelengthsaaaaaaaaaa
wavelengthsaaaaaaaaaa
Login to View More

Abstract

A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This is a continuation application based on pending application Ser. No. 12 / 155,490, filed Jun. 5, 2008, the entire contents of which is hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments relate to a hardmask composition for lithography, the hardmask composition including one or more aromatic ring-containing polymers with a strong absorption in the short wavelength region (e.g., 157 nm, 193 nm, and 248 nm), and a method of patterning material on a substrate using the same.[0004]2. Description of the Related Art[0005]There is a continuous demand to reduce the size of structural shapes in the microelectronics industry and other related industries, including the manufacture of microscopic structures, e.g., micromachines, microelectromechanical systems (MEMS), and magneto-resistive heads. In the microelectronics industry, there exists a need to reduce the size of microelectronic devices...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/26G02B5/22
CPCY10S438/952G03F7/091G03F7/004G03F7/0045G03F7/0047G03F7/11
Inventor YOON, KYONG HOKIM, JONG SEOBUH, DONG SEONCHEON, HWAN SUNGOH, CHANG ILKIM, MIN SOOLEE, JIN KUK
Owner CHEIL IND INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com