33results about How to "Minimize reflectivity" patented technology

A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.

A tunable Fabry-Perot filter that is less sensitive to angle of incidence is formed by replacing the cavity (air gap) with a partitioned cavity that has an effective refractive index greater than one. The partitioned cavity includes a pair of partitioned cavity dielectric layers formed on the reflectors on either side of the variable air gap. Each of the dielectric layers has an optical thickness that is less than one fourth the shortest wavelength in the tuning range of the filter. The resulting three-layer partitioned cavity has an effective optical thickness substantially equal to an integral multiple (m) of one half the transmitted wavelength within the tuning range of the filter.

An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.

An anti-reflective hardmask composition is provided. In an exemplary embodiment, the anti-reflective hardmask composition includes (a) a carbazole derivative polymer represented by the following Formula 1 or a polymer blend comprising the carbazole derivative polymer, and (b) an organic solvent:

A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:

An anti-reflective hardmask composition contains: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solventin Chemical Formula 1, A1 and A2 are each independently a (C6-C40) aromatic aryl group and are the same as or different from each other,R is t-butyloxycarbonyl (t-BOC), ethoxyethyl, isopropyloxyethyl, or tetrahydropyranyl,X1 and X2 are each a polymerization linkage group derived from aldehyde or an aldehyde acetal monomer capable of being one-to-one polymerized with an arylcarbazole derivative and A2 in the presence of an acid catalyst,m / (m+n) is in a range of 0.05 to 0.8, anda weight average molecular weight (Mw) of an the polymer is in a range of 1,000 to 30,000.

Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1with a compound of Formula 2(R)m—Si—(OCH3)4-m  (2)in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent.Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent.