32results about How to "Minimize reflectivity" patented technology

A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.

Disclosed herein is a high-efficiency solar cell. More specifically, provided is a solar cell comprising a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer formed on the first conductivity type semiconductor substrate and having a conductivity type opposite to that of the substrate, a p-n junction at an interface therebetween, a rear electrode in contact with at least a portion of the first conductivity type semiconductor substrate, a front electrode in contact with at least a portion of the second conductivity type semiconductor layer, and a silicon oxynitride passivation layer and a silicon nitride anti-reflective layer sequentially formed on a rear surface of the first conductivity type semiconductor substrate and/or a front surface of the second conductivity type semiconductor layer; and a process for preparing the same. Therefore, the solar cell according to the present invention can improve a photoelectric conversion efficiency by minimizing a reflectivity of absorbed light via provision of a dual reflective film structure composed of the passivation layer and anti-reflective layer, simultaneously with effective prevention of carrier recombination occurring at a semiconductor surface by the passivation layer. Further, the present invention enables a significant reduction of production costs by mass production capability via in situ continuous formation of the dual reflective film structure.

A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

In the fabrication of semiconductor devices using the PECVD process to deposit hardmask material such as amorphous carbon, structure and process are described for reducing migration of species from the amorphous carbon which can damage an overlying photoresist. In one embodiment useful to 248 nm and 193 nm photolithography exposure wavelengths, amorphous carbon is plasma-deposited on a substrate to pre-defined thickness and pre-defined optical properties. A SiON layer is combined with a silicon-rich oxide layer, a silicon-rich nitride layer or a TEOS layer to create a capping layer resistant to species-migration. Layers are formulated to pre-determined thicknesses, refractive indices and extinction coefficients. The capping stacks constitute an effective etch mask for the amorphous carbon; and the hardmask properties of the amorphous carbon are not compromised. The disclosure has immediate application to fabricating polysilicon gates.

A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

A tunable Fabry-Perot filter that is less sensitive to angle of incidence is formed by replacing the cavity (air gap) with a partitioned cavity that has an effective refractive index greater than one. The partitioned cavity includes a pair of partitioned cavity dielectric layers formed on the reflectors on either side of the variable air gap. Each of the dielectric layers has an optical thickness that is less than one fourth the shortest wavelength in the tuning range of the filter. The resulting three-layer partitioned cavity has an effective optical thickness substantially equal to an integral multiple (m) of one half the transmitted wavelength within the tuning range of the filter.

An aromatic ring-containing compound for a resist underlayer and a resist underlayer composition, the aromatic ring-containing compound being represented by the following Chemical Formula 1:

wherein, in Chemical Formula 1, R₁ to R₆ are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C5 to C20 aromatic ring group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, or a substituted or unsubstituted C2 to C20 heterocycloalkyl group, X₁ to X₆ are each independently hydrogen, a hydroxy group (—OH), a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted alkoxy group, or an amino group (—NH₂), n1 to n6 are each independently 0 or 1, and 1≦n1+n2+n3+n4+n5+n6≦6.

A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:

A prism for a projection optical system included in a projector including an illumination light source, an illumination optical system, and a projection optical system, includes: a first surface that totally reflects a beam of one of the illumination light and the projection light and transmits a beam of the other; and a second surface that is opposed to the first surface with an air gap therebetween and transmits a beam passing through the first surface, wherein the first surface has an antireflective film having an average reflectivity of a s-polarized reflectivity and a p-polarized reflectivity at a center angle of a transmitted beam of 2% or lower in three wavelength ranges including a first wavelength range of blue, a second wavelength range of green, and a third wavelength range of red.

A structure for reducing internal reflections in an optical system includes a stack of layers including a first layer having a first refractive index, a second layer having a second refractive index, a third layer having a third refractive index, a fourth layer having a fourth refractive index, and a fifth layer having a fifth refractive index. The second layer is arranged between the first layer and the third layer, and the fourth layer is arranged between the third layer and fifth layer. Further, the third refractive index is greater than the second and fourth refractive indexes, the second refractive index is greater than the first refractive index, and the fourth refractive index is greater than the fifth refractive index.

A technique for minimizing motor polygon assembly output reflectivity using real time facet reflectivity measurements and mapping. An automatic power control sensor manages laser beams produced by the laser source associated with the system during overscan periods ‘outside’ of defined printing time. Errors are then recorded internal to the raster output scanner to minimize overall setup in the image output terminal.

An anti-reflective hardmask composition is provided. In an exemplary embodiment, the anti-reflective hardmask composition includes (a) a carbazole derivative polymer represented by the following Formula 1 or a polymer blend comprising the carbazole derivative polymer, and (b) an organic solvent:

A surgical drape manufactured or fabricated from a polymeric film having a low glare finish and a predetermined coloration for reducing the luminous intensity of light reflected from the surface thereof is provided. Such surgical drape thereby minimizes reflectivity therefrom, and thus eye strain and fatigue. The subject invention includes the use of colorants, dyes, pigments, etc. to form translucent polymeric surgical drapes that absorb a selected range of wavelengths from surface reflected light. More particularly, the use of coloring agents in combination with a textured surface yield a surgical drape possessing reduced luminance and glare, thereby mitigating eye strain and fatigue. The preferred range of reflected light, in order of preference, is 625-700 nm, 520-560 nm, 450-520 nm, 400-450 nm, 600-625 nm, and 560-600 nm.

A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.

Provided is a tunable external cavity laser diode using a variable optical deflector wherein the variable optical deflector, in which a refractive index varies according to an electrical signal, is arranged in a triangular shape between a concave diffraction grating and a reflective mirror. Since a resonant frequency is changed using the electrical signal rather than the mechanical movement, the stable operation and continuous high-speed tenability may be enabled. In addition, when the tunable external cavity laser diode according to the present invention is implemented in an InP/InGaAsP/InP slab waveguide, a variable time determined by the carrier lifetime may be reduced to several nanoseconds or less, the miniaturization is enabled, and the manufacturing costs are significantly reduced due to the process simplification. Moreover, when the concave diffraction grating is designed based on a silica (or polymer) based slab waveguide, the fabrication may be performed even by a lithography process having low resolution, thereby enhancing reproducibility and uniformity of the diffraction grating, and accordingly reducing the manufacturing costs.