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Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell

a technology of solar cells and solar cells, which is applied in the manufacture of final products, pv power plants, basic electric elements, etc., can solve the problems of deterioration of photocurrent response characteristics at long wavelengths, leakage current at grain boundaries, and deterioration of output characteristics of amorphous silicon solar cells, so as to achieve satisfactory crystallinity, improve conversion efficiency, and improve the effect of optical path length

Inactive Publication Date: 2012-05-17
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The approach results in a high conversion efficiency relative to thickness, reduced light irradiation deterioration, and effective silicon resource utilization, with the single crystal silicon layer exhibiting improved crystallinity and increased light absorption efficiency.

Problems solved by technology

In addition, amorphous silicon solar cells still suffer from deterioration of the output characteristics under light irradiation.
However, even with such a method employing zone melting, there have been problems such as leakage current at grain boundaries and deterioration of photocurrent response characteristics at long wavelengths due to a shortened lifetime.

Method used

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  • Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
  • Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
  • Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0100]A single crystal silicon substrate with a diameter of 200 mm (8 inches), the crystal plane (100), the p-type conductivity, and a surface resistance of 15Ω cm was prepared as a single crystal silicon substrate 11. A quartz glass substrate with a diameter of 200 mm (8 inches) and a thickness of 2.5 mm was also prepared as a transparent insulator substrate 12 (Step a).

[0101]H+ ions were then implanted into one main surface of the single crystal silicon substrate 11 at a dose of 1.0×1017 / cm2 and at an energy level of 350 keV (Step b). An ion-implanted layer 14 was thus formed at a depth of about 3 μm from the ion-implanted surface 13.

[0102]A polycondensate was obtained by hydrolysis and polycondensation of an alkyltrialkoxysilane and a tetraalkoxysilane using hydrochloric acid as a catalyst. The product was dissolved in isopropyl alcohol solvent to give a transparent adhesive (silicone resin). The single crystal silicon 11 and the quartz glass substrate 12 were brought in close co...

example 2

[0112]A light-scattering layer was additionally formed on a light-receiving surface 29 of a quartz glass substrate 12 of a single crystal silicon solar cell as fabricated in Example 1, as follows. A polycondensate resin which was obtained by hydrolysis and polycondensation of an alkyltrialkoxysilane and a tetraalkoxysilane using hydrochloric acid as a catalyst, and which contained 60% by weight of zirconium oxide particles with an average particle size of 0.3 μm and a refractive index of 2.4, was dissolved in isopropyl alcohol solvent to form a transparent resin material. The transparent resin material was then applied onto the quartz glass substrate 12 to a thickness of 2 μm.

[0113]The single crystal silicon solar cell thus having a light-scattering capability on the light-receiving surface 29 of the quartz glass substrate 12 was measured for conversion efficiency in the same manner as in Example 1. As a result, the conversion efficiency was 15% without any change over time.

[0114]Ow...

example 3

[0115]A thin-film single crystal silicon solar cell 31 was fabricated in the same manner as in Example 1, except that a quartz glass substrate 12 in which both surfaces have irregularities with a size of about 0.1 μm was used.

[0116]The single crystal silicon solar cell thus having a light-scattering capability on the interface of the quartz glass substrate 12 with the transparent adhesive layer 16 was measured for conversion efficiency in the same manner as in Example 1. As a result, the conversion efficiency was 16% without any change over time.

[0117]Owing to a further improvement in the optical-confinement structure, the conversion efficiency became higher than that of Example 1.

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Abstract

A single crystal silicon solar cell including a stack having at least a light-reflecting film, a single crystal silicon layer, a transparent adhesive layer, and a transparent insulator substrate; a plurality of areas of a first conductivity type and a plurality of areas of a second conductivity type formed in a surface of the silicon layer near the light-reflecting film; a plurality of pn junctions formed in a plane direction of the silicon layer; a plurality of first individual electrodes, each being formed on each one of the plurality of areas of the first conductivity type, and a plurality of second individual electrodes, each being formed on each one of the plurality of areas of the second conductivity type; and a first collector electrode for connecting the plurality of first individual electrodes and a second collector electrode for connecting the plurality of second individual electrodes.

Description

[0001]CROSS-REFERENCE TO PRIOR APPLICATIONS[0002]This is a divisional of application Ser. No. 12 / 073,437 filed Mar. 5, 2008, and claims the benefit of Japanese Patent Application No. 2007-056870 filed Mar. 7, 2007. The entire disclosures of the prior applications are hereby incorporated by reference herein in their entirety.BACKGROUND OF THE INVENTION[0003]1. Field of the Invention[0004]The present invention relates to a method for manufacturing a single crystal silicon solar cell, and a single crystal silicon solar cell.[0005]2. Description of the Related Art[0006]Solar cells produced using silicon as a principal raw material are classified into single crystal silicon solar cells, polycrystal silicon solar cells, and amorphous silicon solar cells, depending on their crystallinity. Among these types, single crystal silicon solar cells are formed by slicing a single crystal ingot obtained by crystal pulling into wafers using a wire saw, processing each wafer to a thickness of 100 to ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L31/05H01L21/22H01L21/225H01L31/056H01L31/06H01L31/068H01L31/18
CPCH01L21/76254H01L31/03921H01L31/1804H01L31/056Y02E10/52H01L31/0682Y02E10/547H01L31/1896Y02P70/50
Inventor ITO, ATSUOAKIYAMA, SHOJIKAWAI, MAKOTOTANAKA, KOUICHITOBISAKA, YUUJIKUBOTA, YOSHIHIRO
Owner SHIN ETSU CHEM CO LTD