Etching paste, method of preparing the same, and method of forming pattern using the same

Abstract

An etching paste includes an acid compound, an organic binder, a nitrogen-containing component, the nitrogen-containing component including one or more of an amine compound or an ammonium compound, a cobalt aluminum oxide, and a solvent.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The application claims the benefit of and priority to Korean Patent Application No. 10-2012-0077882, filed on Jul. 17, 2012, in the Korean Intellectual Property Office, and entitled: “ETCHING PASTE, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAME,” which is incorporated by reference herein in its entirety.BACKGROUND[0002]1. Field[0003]Embodiments relate to an etching paste, a method of preparing the same, and a method of forming a pattern using the same.[0004]2. Description of the Related Art[0005]A pattern forming process may be used for semiconductor devices and flat panel displays such as LCDs, OLEDs, and PDPs. A typical pattern forming process is performed using a photosensitive material such as photoresist, in which a photoresist layer is formed by depositing the photoresist on a metal layer formed on a substrate of an insulating material, such as glass, or a semiconductor material, followed by exposure and ...

AI Technical Summary

Benefits of technology

This patent describes an etching paste that includes an acid compound, an organic binder, a nitrogen-containing component, cobalt aluminum oxide, and a solvent. The nitrogen-containing component may be an amine compound or an ammonium compound. The etching paste may also include other components such as an organic acid, inorganic particles, a foaming agent, a leveling agent, an antifoaming agent, a thickener, a thixotropic agent, a plasticizer, a dispersant, a viscosity stabilizer, a UV stabilizer, an antioxidant, or a coupling agent. The etching paste may be used to form patterns on a substrate by printing the etching paste and then drying and washing it. The patterned substrate may include aluminum or indium tin oxide. The technical effects of this patent include improved etching performance and the ability to create precise patterns on various substrates.

Problems solved by technology

Such a metal pattern formation process using photoresist may involve a complicated manufacturing process since a pattern is formed via photoresist application, baking, exposure, and development.

Particularly, a soft baking process at a particular temperature and a hard baking process at a higher temperature than the soft baking temperature may be needed to bake the photoresist, thereby making the process complicated.

As a result, the typical pattern forming process may have undesirable characteristics such as increase in manufacturing costs, environmental contamination due to waste photoresist contaminates, and device defects caused by remaining photoresist.

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