Ohmic contact of thin film solar cell

a solar cell and thin film technology, applied in the field of contact structures, can solve the problems of reducing the efficiency of the solar cell, degrading the electrical contact between the absorber poor ohmic contact between the molybdenum layer and the absorber layer, so as to reduce the chalcogenization of the transition metal, reduce the contact resistance, and reduce the effect of contact resistan
US20140030843A1Inactive Publication Date: 2014-01-30IBM CORP
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
IBM CORP
Publication Date
2014-01-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide / kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.
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Description

BACKGROUND

[0001] The present disclosure relates to contact structures, and particularly to low resistance contact structures between a transition metal layer and a semiconductor material, and methods of manufacturing the same.

[0002] Many thin film solar cells include a chalcogenide in an absorber layer. The chalcogenide can be a chalcopyrite such as CuIn(S,Se)2 (CIS) and CuInGaSe2 (CIGS), kesterite (Cu2(Zn, Fe) Sn (Se,S)4, Ga(S,Se), GaTe, GaAs, In2(S,Se)3, and InTe, InP, CdTe, Cd(S, Se), ZnTe, Zn3P2, Pb(Se,S), Zn(S, Se), W(S,Se)2, Bi2S3, Ag2S, NiS, ZnO, Cu2O, CuO, Cu2S, FeS2. These solar cells have been fabricated using different process like PVD, CVD, solution processes, or electrochemical deposition process.

[0003] For example, in thin films solar cells, a back contact material such as molybdenum is deposited on a dielectric substrate. Absorber layers, such as a stack of a p-type semiconductor material and an n-type semiconductor material, are deposited on the back contact material. W...

Claims

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