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Chip-type three-dimensional magnetic field sensor

a three-dimensional magnetic field and chip-type technology, applied in the direction of magnetic measurement, instruments, measurement devices, etc., can solve the problems of inability to measure digital current (dc) magnetic fields or magnetic fields with low change rate, fluxgates and proton magnetometers are very serious in energy consumption, and coil sensors have certain limitations

Active Publication Date: 2022-07-14
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a chip-type three-dimensional magnetic field sensor with three-axis monolithic integration, high integration, small size, simple preparation process, and easy packaging. The sensor uses a symmetrical structure of Machzand interferometer with a broad-spectrum light source, which is not affected by light intensity fluctuations, and effectively avoids errors caused by parasitic effects. The sensor is suitable for mass production due to its small size and easy packaging.

Problems solved by technology

Among high-sensitivity magnetic field sensors, coil sensors have certain limitations, and are only able to measure dynamically changing magnetic fields with high change rate, but are unable to measure digital current (DC) magnetic fields or magnetic fields with low change rate.
Fluxgates and proton magnetometers are very serious in energy consumption, and are limited by their own principles in frequency, which are unable to adapt to the development trend of high frequency.
Optical pumps are larger in size, more expensive, consume more energy (a few watts), and are inconvenient to maintain.
Superconducting quantum interferometers are up to 10−15 T in sensitivity, but they require a low temperature and harsh environment and are only able to be used in the laboratory.

Method used

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embodiment

[0031]The light source for outputting broad-spectrum depolarized light provided by the present invention is embodied as an ASE (amplified spontaneous emission) light source with an output power of 5 mw, a center wavelength of 1550 nm, and a 3 dB half-height spectrum width of 40 nm. The silica substrate 28 has a thickness of 0.5 mm, the silica buffer layer 27 has a thickness of 2 μm, and the lithium niobate single crystal thin film layer 26 has a thickness of 0.6 μm. The magneto-optical material 29 uses cerium-doped yttrium iron garnet (Ce:YIG), an Faraday rotation angle θF of Ce:YIG is 7.0×10−3 μm, a magneto-optical coefficient f1=−8.63×10−8 A / m, a saturation magnetization Ms reaches 95.5 kA / m, and an effective refractive index nCe:YIG=2.22.

[0032]All of the input straight waveguide, the polarization beam splitting waveguide, the 1:1 power beam splitter, the first 1:2 type Y waveguide, the first straight waveguide, the first 2:1 type Y waveguide, the first output straight waveguide, ...

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Abstract

A chip-type three-dimensional magnetic field sensor includes a light source (1), an input straight waveguide (2), a polarization beam splitting waveguide (3), a 1:1 power beam splitter (4), three 1:2 type Y waveguides, three 2:1 type Y waveguides, three output straight waveguides, three magneto-optical waveguides and three photodetectors. The light source (1) outputs broad-spectrum depolarized light into the input straight waveguide (2), and then the light is divided into TE (transverse electric) polarized light and TM (transverse magnetic) polarized light. The TE polarized light is divided into two beams of TE polarized branch light. The TM polarized light is divided into two beams of TM polarized branch light. One of the two beams of TM polarized branch light is divided into two beams of first TM polarized sub-branch light. Another of the two beams of TM polarized branch light is divided into two beams of second TM polarized sub-branch light.

Description

CROSS REFERENCE OF RELATED APPLICATION[0001]This is a U.S. National Stage under 35 U.S.C 371 of the International Application PCT / CN2020 / 086127, filed Apr. 22, 2020, which claims priority under 35 U.S.C. 119(a-d) to CN 201910391741.X, filed May 13, 2019.BACKGROUND OF THE PRESENT INVENTIONField of Invention[0002]The present invention relates to the field of integrated optical and magnetic field sensing technology, and more particularly to a chip-type three-dimensional magnetic field sensor.Description of Related Arts[0003]Magnetic field sensors play an important role in many fields such as daily transportation, geophysics, military defense, and biomedicine. For example, the aircraft adopts magnetic field sensors to realize highly reliable contactless information exchange, so as to ensure the flight safety; all kinds of mine resources such as steel, rare metals and non-ferrous metals are able to be located by magnetic field sensors, thereby greatly reducing the cost of prospecting; by...

Claims

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Application Information

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IPC IPC(8): G01R33/032G01R33/02
CPCG01R33/0322G01R33/0206G01R33/032
Inventor SHE, XUANYAO, JUNJIECHEN, KANHUANG, TENGCHAOSHU, XIAOWU
Owner ZHEJIANG UNIV
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