Reactor, plant and industrial process for the continuous preparation of high-purity silicon tetrachloride or high-purity germanium tetrachloride

a technology of high-purity germanium tetrachloride and reactor, which is applied in the direction of chemical/physical/physical/physical-chemical processes, silicon compounds, energy-based chemical/physical/physical-chemical processes, etc., can solve the problems of high operating costs of the plant, frequent shutdown of the plant, and considerable disadvantage of hydrogen-containing compounds
US8221593B2Active Publication Date: 2012-07-17EVONIK OPERATIONS GMBH
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
EVONIK OPERATIONS GMBH
Publication Date
2012-07-17

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Abstract

A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.
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Description

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application is the National Stage of PCT / EP06 / 62916, filed Jun. 6, 2006, the disclosure of which is incorporated herein by reference in its entirety. The parent application claims priority to German Application No. 10 2005 041 137.1 files Aug. 30, 2005, the disclosure of which is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION

[0002] The present invention relates to a continuous process, a plant and a reactor for the preparation of high-purity silicon tetrachloride or high-purity germanium tetrachloride by treatment of the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated with at least one hydrogen-containing compound, by means of a cold plasma and subsequent fractional distillation of the treated phase.

[0003] Silicon tetrachloride (SiCl4) and germanium tetrachloride (GeCl4) are used, inter alia, for producing optical fibres. For these applications, SiCl4 having a very hi...

Claims

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