11978results about "Cosmetic containers" patented technology

In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is introduced into the chamber at a pressure range of from about 30 mTorr to about 90 mTorr. During this time, deposition and etching processes are concurrently performed using a plasma to form a high-density plasma (HDP) insulating layer on the semiconductor substrate. A ratio of deposition to etching is from about 3:1 to about 10:1. A ratio of a flow rate of the fluorine-containing gas to a flow rate of the silicon-containing gas is less than about 0.9.

A solid-state light source 10 compatible with existing sockets normally reserved for filamented lamps may be formed with a hollow base 12 formed to mechanically and electrically adapt to a socket. A sub-assembly 14 adapted to cooperate with and fit into the hollow base 12 comprises a metal core 16 having a bulbous body 18 and a narrow, depending foot 20. A circuit board 22 substantially surrounds the metal core 16 on two sides. The board 22 is preferably formed from a flexible printed circuit board material capable of sustaining a bend radius of at least 0.25 inches (6 mm). Solid-state light sources 30, for example, light emitting diodes (LEDs) are mechanically and electrically connected to one side of the circuit board by suitable electrically conductive traces. A glass dome 34 covers the sub-assembly 14 after it is inserted into the hollow base 12 and is sealed thereto.