8results about How to "High cell density" patented technology

Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

A trench MOSFET device comprising: (a) a silicon substrate of a first conductivity type (preferably N-type conductivity); (b) a silicon epitaxial layer of the first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substrate; (c) a body region of a second conductivity type (preferably P-type conductivity) within an upper portion of the epitaxial layer; (d) a trench having trench sidewalls and a trench bottom, which extends into the epitaxial layer from an upper surface of the epitaxial layer and through the body region of the device; (f) an oxide region lining the trench, which comprises a lower segment covering at least the trench bottom and upper segments covering at least upper regions of the trench sidewalls; (g) a conductive region within the trench adjacent the oxide region; and (h) a source region of the first conductivity type within an upper portion of the body region and adjacent the trench. The lower segment of the oxide region is thicker than the upper segments of the oxide region in this embodiment.

A semiconductor power device is supported on a semiconductor substrate of a first conductivity type with a bottom layer functioning as a bottom electrode and an epitaxial layer overlying the bottom layer with a same conductivity type as the bottom layer. The semiconductor power device includes a plurality of FET cells and each cell further includes a body region of a second conductivity type extending from a top surface into the epitaxial layer. The body region encompasses a heavy body dopant region of second conductivity type. An insulated gate is disposed on the top surface of the epitaxial layer, overlapping a first portion of the body region. A barrier control layer is disposed on the top surface of the epitaxial layer next to the body region away from the insulated gate. A conductive layer overlies the top surface of the epitaxial layer covering a second portion of the body region and the heavy body dopant region extending over the barrier control layer forming a Schottky junction diode.

Bioreactor system and method for cloning the physiological state of microorganisms comprises in preferred embodiment of a mother-reactor and one or more daughter-reactors with sensors, stirrers, fluid and gas flow channels, scales, pumps, controllers, computer, software, valves and accessory devices. The bioreactors are inter-connected with culture transfer hose. To achieve the method, the mother-reactor is filled with necessary volume, inoculated, stabilised in continuous cultivation, the microbial culture's volume is increased in variable volume cultivation while maintaining constant physiology, microbial culture is transferred from the mother-reactor into the daughter-reactors while maintaining constant physiology, experiment in the daughter reactor follows. After the experiment daughter-reactors are sterilized and rinsed. During the experiment culture volume in the mother-reactor is increased anew, after the experiment in the daughter-reactors is finished another culture transfer follows and next experiment is conducted. This sequence—variable volume cultivation, culture transfer, experiment—is repeated until necessary data has been acquired.

The present invention provides improved methods of production of viral antigen on a culture of adherent cells bound to a microcarrier, wherein the methods provide for increased viral antigen yield per culture medium volume. The invention is also directed to a cell culture biomass of adherent cells having increased cell density and microcarrier concentration compared to the respective confluent cell culture.