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Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device

A technology for electronic devices and implementation methods, applied in the structure of optical resonators, electrical components, semiconductor devices, etc., can solve problems such as difficulty in realizing high-quality factor optical resonators, restricting surface-emitting lasers, and refractive index differences.

Inactive Publication Date: 2008-05-14
BEIJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation of InP (indium phosphide)-based wedge-shaped structures has not been reported yet.
[0005] Moreover, there are still some restrictive factors for the preparation of InP-based optoelectronic devices
Since the refractive index difference of the epitaxially grown material system on the InP-based substrate is usually small (about 0.15), it is difficult to obtain a DBR (Distributed Bragg Reflector) with high reflectivity, so it is difficult to achieve an optical resonance with a high quality factor Cavity
This restricts the development of long-wavelength resonant cavity photodetectors (RCE-PDs) and surface-emitting lasers (VCSELs).

Method used

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  • Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device
  • Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device
  • Method for making structure of wedge chamber and parallel chamber in indium phosphide based photoelectronic device

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Embodiment Construction

[0015] see figure 1 The guide layer 2 and the epitaxial layer 3 of the device of the embodiment of the present invention are epitaxially grown on the InP substrate 4, and a layer of mask layer 1 is formed on the surface of the guide layer 2. Remove the mask layer at the position, and then put it in the etching solution, and take it out from the etching solution after realizing the required wedge-shaped structure. In the device of this embodiment, the guide layer 2 is made of InGaAs material, the epitaxial layer 3 is made of InGaAsP material, and the guide layer 2 is made of InGaAsP material. The etch rate is higher than that of the epitaxial layer 3. While the guide layer 2 is corroded laterally, the epitaxial layer 3 gradually exposes the surface and begins to corrode downward, so a wedge-shaped structure with an inclination angle of θ is etched on the epitaxial layer 3.

[0016] Selective corrosion solutions for InGaAs / InGaAsP include: citric acid / H 2 o 2 , HCl / H 3 PO 4 ...

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Abstract

This invention is relative to an optoelectronic device based on InP., particularly, an implementing method of the wedge shape cavity and parallel cavity. The feature of this invention is: by using selective corrosion the wedge shape structure having special angle of inclination is implemented on the epitaxial layer of InP base, and the parallel cavity structure based on air gap is implemented. Particularly, the angle of wedge shape structure can be adjusted through selecting different proportion of ingredients for etching solution. This invention is relative to the method having the feature being compatible with semiconductor integration technology, it will effects the development of light wave and electronic device in the future.

Description

technical field [0001] The invention relates to a preparation method of an indium phosphide (InP)-based optoelectronic device with a wedge-shaped cavity or a non-parallel cavity structure, in particular to a method for realizing a wedge-shaped structure in a photodetector and a resonant cavity structure based on an air gap. Background technique [0002] A major structural feature of various current semiconductor optoelectronic devices is that they belong to a layered structure in the direction perpendicular to their substrates, and the layers are usually parallel to each other (and parallel to the substrate surface). This is determined by the semiconductor epitaxial growth process. The development of semiconductor devices over the years has inherited this structure. In recent years, with the rapid development of optical communication and optical information processing technology, wedge-shaped structures are used in optical waveguide interconnection (such as light wave mode ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01L21/306C23F1/16H01L31/18H01L33/00
CPCY02P70/50
Inventor 任晓敏王兴妍黄辉王琦黄永清
Owner BEIJING UNIV OF POSTS & TELECOMM