Unlock instant, AI-driven research and patent intelligence for your innovation.

Scan type ion gun

An ion gun and scanning technology, applied in the direction of ion beam tubes, discharge tubes, electrical components, etc., can solve problems such as unsatisfactory uniformity and effective etching area, system cooling restrictions, and difficult operation tables.

Inactive Publication Date: 2008-05-21
SHANGHAI ELECTRICAL HYDRAULICS & PNEUMATICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In step 2, a water cooling system is usually used on the operating table where the sample is placed to prevent damage to the sample caused by excessive temperature. It can be rotated, which brings two major problems: the uniformity of sample etching and the effective area of ​​etching (the area where the ion flow reaches the density required for etching) is not ideal due to the limitation of the ion flow itself
This method is based on the modification of the operating table based on the use of traditional ion sources, and the system cooling is limited to a certain extent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Scan type ion gun
  • Scan type ion gun

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] like figure 1 Shown is a scanning ion gun, which is set in a vacuum chamber (not shown in the figure), and includes a discharge chamber made of a quartz tube 1, and a source 2 and a grid 3 are placed in the middle and rear of the quartz tube. , the grid assembly composed of the accelerating pole 4; the source 2, the grid 3 and the accelerating pole 4 are all circular aluminum electrodes with a round hole in the center, and the three are arranged at intervals from each other. Thick copper wires are respectively connected to the three electrodes, and two small quartz tubes with an outer diameter slightly smaller than the aluminum disk are placed between the aluminum disks to maintain the distance between the source electrode 2 , the grid electrode 3 and the accelerating electrode 4 .

[0018] A helical tube 5 is provided outside the quartz tube 1. The helical tube 5 is wound by a copper wire and fixed with a thick wire, and is directly placed outside the quartz tube 1 to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a scanning type ion gun. It contains discharge chamber, gate assembly, and magnetic field convergence device, wherein gate assembly consisting of source, gate and accelerator all having central hole, convergence magnetic field covering source and gate, featuring that the terminal of discharge chamber located at one side of accelerator set with scanning magnetic field device. Said scanning realizes large area large area homogeneous film etching through ion beam field mode on x - y direction, and having simple structure low cost of manufacture advantages.

Description

technical field [0001] The invention relates to an improvement of the structure of an ion gun. Background technique [0002] Digital information storage has become the biggest driving force of modern civilization and one of the most promising research fields in the information age. The demand for higher information storage density and faster information transmission speed has prompted the development of nanotechnology applications in the information field. In the next stage, the development of electronic components will be further nanometerized and enter the quantum world. [0003] In the construction of nano-components, ion etching is a widely used process, and its general steps are: [0004] 1. Etching masks using electron beam / ultraviolet lithography; [0005] 2. Put the mask on the sample to be engraved and expose it to the high-energy Ar+ ion current; [0006] 3. Remove residue with acetone (CH3COCH3). [0007] In step 2, a water cooling system is usually used on t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/08H01J27/02H01L21/3065
Inventor 刘阳旸
Owner SHANGHAI ELECTRICAL HYDRAULICS & PNEUMATICS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com