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Method for producing lead zirconate-titanate thin film infrared thermal imaging detector hanging structure

A technology of infrared thermal imaging and lead zirconate titanate, which is applied in the field of production, can solve the problems that have not been found in reports or literature, and achieve the effect of good compatibility and simple removal method

Inactive Publication Date: 2008-10-29
XIAN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The project team of this invention has searched domestic and foreign patent documents and published journal papers, and has not found any reports or documents closely related to the present invention.

Method used

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  • Method for producing lead zirconate-titanate thin film infrared thermal imaging detector hanging structure
  • Method for producing lead zirconate-titanate thin film infrared thermal imaging detector hanging structure
  • Method for producing lead zirconate-titanate thin film infrared thermal imaging detector hanging structure

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Embodiment 1

[0036] Embodiment 1: The present invention is a method for manufacturing a lead zirconate titanate thin film infrared thermal imaging detector suspension structure. A magnesium oxide film with a certain thickness is plated on a silicon wafer as an uncooled focal plane for making a lead zirconate titanate thin film The sacrificial layer of the suspension structure of the infrared thermal imaging detector, and the suspension height is controlled by controlling the thickness of the sacrificial layer; SiN is fabricated by plasma enhanced chemical vapor deposition (PECVD) x , used to balance the stress of the lead zirconate titanate film; the rapid heat treatment method is applied to the common electrode Ti / Pt and the lead zirconate titanate sensitive film to obtain a high-performance lead zirconate titanate film,

[0037] As shown in Figure 1, the specific steps are as follows:

[0038] Step 1. Use RCA process to clean the single-sided polished silicon substrate, take it out and b...

Embodiment 2

[0052] Process conditions, manufacturing steps, and equipment used are all the same as in Example 1, and the difference is that in step two, the thickness of the plated magnesium oxide film is 1.5 μm; in step three, SiNx The thickness of the film is controlled to be 150nm; in step 6, a PZT film is prepared by a sol-gel method, and the thickness of the film layer is 200nm.

Embodiment 3

[0053] Embodiment 3: process conditions, manufacturing steps, equipment used are all the same as embodiment 1, the difference is: in step two, the thickness of the magnesium oxide film layer is 2.5 μm; in step three, SiN x The thickness of the film is controlled to be 300nm; in step 6, the PZT film is prepared by the sol-gel method, and the thickness of the film layer is 400nm.

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Abstract

The present invention refers to method for making lead zirconate titanate film infrared thermal imaging decetor hanging structure. It contains plating certain of thickeness magnesia film on silicon wafer as sacrificial layer for preparing lead zirconate titanate film non - refrigeration focal plane infrared thermal imaging decetor hanging structure, and through controlling sacrificial layer thickeness to control hanging height, adopting plasma enhancing CVD method preparing SiNx for balancing lead zirconate titanate thin-film stress, using fast cycle heat treatment method to share electrode Ti / Pt and lead zirconate titanate sensitivity film making fast cycle heat treatment to obtain high performance lead zirconate titanate film. The present invention mainly solves decetor hanging part with substrate connective problem, having simple removing sacrificial layer material method and fine consistency with other structure.

Description

technical field [0001] The invention relates to the technical field of infrared thermal imaging detection, and further relates to the technical field of using PZT film as an infrared sensitive material to make a suspended structure of an uncooled focal plane infrared thermal imaging detector, specifically a lead zirconate titanate thin film infrared thermal imaging detection The fabrication method of the device suspension structure. Background technique [0002] Photon detectors based on the photoelectric effect and pyroelectric detectors based on the pyroelectric effect have always been the two pillars of infrared thermal imaging technology. For a long time, due to the development of HgCdTe, InSb and PtSi detectors, the thermal imaging technology of photodetectors has been developed rapidly, and has been applied in the military field and some industrial fields. It is difficult to form a large market. After years of development, the thermal imaging technology of pyroelectr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L37/02H01L31/18G01J5/10
CPCY02P70/50
Inventor 刘卫国蔡长龙刘欢张伟周顺
Owner XIAN TECH UNIV
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