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Method for making magnetosensitive device based on soft magnetic multilayer huge magnetoimpedance effect

A technology of giant magneto-impedance and manufacturing method, applied in the field of sensors, can solve the problems of wire and thin strip welding, easily broken wire and thin strip, difficult installation, etc., and achieve the effects of linearization, improved magnetic field sensitivity and low cost

Inactive Publication Date: 2008-11-05
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
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Problems solved by technology

However, wires and ribbons will encounter many problems in terms of miniaturization, repeatability of device performance, mass production, and matching with detection circuits, such as welding of wires and ribbons in circuits, difficulty in installation, wire and ribbons Thin strips are easily broken, etc.

Method used

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Embodiment Construction

[0030] It will be further described below in conjunction with the embodiments.

[0031] The manufacturing method of the present invention, specifically:

[0032] (1) The photoresist was thrown on both sides of the cleaned and treated double-sided oxidized silicon substrate, the thickness of the photoresist was 5μm, the drying temperature of the photoresist was 95℃, and the time was 1 hour; single-sided (called B side) After exposure and development, use BHF etching solution to etch silicon dioxide at an etching temperature of 40°C, and then remove the photoresist;

[0033] (2) The magnetic sensor development process is carried out on the other side of the silicon wafer (referred to as A side), and the following are all carried out on the A side;

[0034] (3) Sputtering soft magnetic film F, F is FeCuNbSiB, FeCuNbCrSiB film, the thickness of the film is 2-6μm;

[0035] (4) Sputtering Cu bottom layer, the thickness is 100~200nm;

[0036] (5) Positive photoresist, the thickness of th...

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Abstract

This invention relates a manufacturing method for a magnetic-sensing device based on a soft magnet multiplayer film huge magnet impedance effect, which applies a film and a MEMS technology to process double face oxidized silicon plate to get an etch overlapped double-face aligned symbol, preparing a zigzag sandwich structure soft magnet multi-layer film material of nm crystal composition applying physical etching technology to remove the base and special etching solution to etch the zigzag sandwich soft magnet multi-layer film huge magnet impedance effect curves of the multi-layer film by selecting suitable magnets to let the magnetic sensing device work at the linear zone.

Description

Technical field [0001] The invention relates to a manufacturing method of a magnetic sensitive device, in particular to a manufacturing method of a magnetic sensitive device based on the giant magneto-impedance effect of a soft magnetic multilayer film, and belongs to the technical field of sensors. technical background [0002] With the rapid development of microelectronics technology, some new, miniaturized, high-performance, high-sensitivity and fast-response new magnetic sensors are needed to monitor the environment in automotive electronics, robotics, bioengineering, and automation control. Surrounding parameters such as: magnetic field, speed, rotation speed, displacement, angle, torque, etc. Magnetic sensors currently being used or developed on the market include Hall effect sensors, anisotropic magnetoresistance (AMR) effect and giant magnetoresistance (GMR) effect sensors. Hall-effect sensor is currently the most widely used magnetic sensor, which can be used for the mea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08G01R33/09G11B5/39
Inventor 周勇丁文曹莹陈吉安周志敏
Owner SHANGHAI JIAO TONG UNIV
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