Water-cooling plasma shower
A plasma and shower technology, which is applied in the fields of plasma, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as large injection beam current, wafer damage, and reduced ion implantation performance, so as to achieve simple structure and improve plasma quality. High density and high cooling efficiency
Inactive Publication Date: 2009-03-11
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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Problems solved by technology
On the one hand, in some ion implantation processes, there is a patterned photoresist on the surface of the wafer, which is insulating. During the ion implantation process, some ions are implanted into the wafer through the vacancies of the pattern, while the rest The ions hit the photoresist, and due to the insulation of the photoresist, as the number of implanted ions increases, static electricity will accumulate on the photoresist; on the other hand, in the process of large-dose ion implantation, due to the Large beam current will also generate static electricity accumulation on the surface of the wafer. This accumulation is not only a hazard to the wafer, but also affects the uniformity of ion implantation, especially as the energy of implanted ions becomes lower and lower. Especially, the performance of ion implantation degrades
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[0022] The present invention will be further introduced below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation to the invention.
[0023] The lead-out plate 1 is generally made of high-purity graphite, which has a long service life and low cost; the filament clamping mechanism 2 is used for the insulation installation of the filament, and the base body is generally made of high-temperature resistant insulating materials, such as ceramic materials; the filament 3 is made of tungsten wire forming; The gas supply pipeline 4 completes the gas supply from the gas supply system to the discharge arc chamber 14, and is made of internally polished high-clean stainless steel tube; the filament lead mechanism 5 is made of copper or aluminum material with good electrical conductivity, and the external connection is designed with a quick-plug connector to realize Quick assembly and disassembly. The filament connection is designed with flexible...
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The invention provides a plasma shower which can generates electron for neutralisation and is used in ion implantation process. It can neutralize the static accumulated on the implanted wafer thereby improving the performance of the ion implantation process and eliminating the harm caused by static accumulation for the implanted wafer.
Description
Technical field: [0001] The invention relates to an ion implanter, which is applied to the ion implantation process of the semiconductor process, and is used to neutralize the static electricity accumulation generated on the implanted wafer in the ion implantation process, improve the performance of the ion implantation process, and eliminate the impact of static electricity accumulation on the implanted wafer. Implant Wafer Hazards. It belongs to the field of semiconductor equipment. Background technique [0002] In the ion implantation process of the semiconductor process, a large number of ions bombard the surface of the wafer under the acceleration and control of the ion implanter. Since these ions are charged particles, each particle bombards the surface of the wafer, and there must be a number of charged ions in the wafer. Equal electrons neutralize the ions. On the one hand, in some ion implantation processes, there is a patterned photoresist on the surface of the w...
Claims
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IPC IPC(8): H01L21/265H01L21/425C30B31/22H01J37/317H05H1/00H05F3/04
Inventor 唐景庭彭立波谢均宇罗宏洋
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP