Box type zinc diffusion method made by indium gallium arsenide photoelectric detector chip

A technology of photodetector and diffusion method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of unreusable and dangerous quartz tubes and diffusion sources, and achieves improved diffusion quality, low manufacturing cost, The effect of ensuring safety

Active Publication Date: 2009-03-25
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

Vacuum-sealed tube zinc diffusion is one of the effective methods for making InGaAs / InPIN photodetector chips. The advantage of this method is that the diffusion equipment is simple and uniform, but a vacuum-sealed tube system is required, and a hydrogen-oxygen flame is used for sealing the tube. , there is a certain danger, the sealing tube is made of quartz tube and the diffusion source cannot be reused

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  • Box type zinc diffusion method made by indium gallium arsenide photoelectric detector chip

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0019] like figure 1 As shown, clean the wafer to be diffused, and dry it with nitrogen; open the sealing cover of the diffusion quartz tube 1, take out the diffusion quartz box 2, and put the cleaned diffusion InGaAs wafer into the quartz crystal with the phosphorus-zinc diffusion source 3 installed. In the box 2, cover the box cover, put the quartz box 2 into the diffusion quartz tube 1, close the quartz tube sealing cover 7; start the vacuum system, vacuumize / fill nitrogen (vacuumize to 10 -2 Tor, filled with nitrogen to normal pressure); repeat this step for two cycles (the purpose is to remove the oxygen in the diffusion quartz tube 1, avoid the oxidation of the wafer during the diffusion process, and ensure the diffusion quality), keep the nitrogen flow rate of the diffusion quartz tube 1 normal pressure ; The diffusion furnace 5 in a constant te...

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Abstract

The invention provides a chamber type zinc diffusion method for preparing indium-gallium-arsenic light-sensitive detector's chips, which consists of placing zinc diffuse source and diffusion chips into the quartz chamber of the diffusion tube, carrying out evacuation / nitrogen inflation cycle, and carrying out zinc diffusion with the protection of nitrogen.

Description

technical field [0001] The invention relates to a box-type zinc diffusion method for making an indium gallium arsenic photodetector chip in the manufacture of semiconductor optoelectronic devices. Background technique [0002] Although the history of semiconductor photodetectors is long, the appearance of long-wavelength InGaAs PIN photodetectors has only a history of more than 20 years, and the appearance and practical application of InGaAs planar PIN photodetectors have only been in the past ten years. The main reason for the process is due to the development process of material growth technology. It was not until the mid-1990s that M0CVD technology emerged and continued to improve, and it was possible to grow high-quality InGaAs wafers (wafers); high-quality InGaAs Wafers are the material basis for making long-wavelength InGaAs PIN photodetector chips. Vacuum-sealed tube zinc diffusion is one of the effective methods for making InGaAs / InPIN photodetector chips. The advan...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/22H01L31/18
CPCY02P70/50
Inventor 徐之韬邱树添
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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