Box type zinc diffusion method made by indium gallium arsenide photoelectric detector chip
A technology of photodetector and diffusion method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of unreusable and dangerous quartz tubes and diffusion sources, and achieves improved diffusion quality, low manufacturing cost, The effect of ensuring safety
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[0018] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0019] like figure 1 As shown, clean the wafer to be diffused, and dry it with nitrogen; open the sealing cover of the diffusion quartz tube 1, take out the diffusion quartz box 2, and put the cleaned diffusion InGaAs wafer into the quartz crystal with the phosphorus-zinc diffusion source 3 installed. In the box 2, cover the box cover, put the quartz box 2 into the diffusion quartz tube 1, close the quartz tube sealing cover 7; start the vacuum system, vacuumize / fill nitrogen (vacuumize to 10 -2 Tor, filled with nitrogen to normal pressure); repeat this step for two cycles (the purpose is to remove the oxygen in the diffusion quartz tube 1, avoid the oxidation of the wafer during the diffusion process, and ensure the diffusion quality), keep the nitrogen flow rate of the diffusion quartz tube 1 normal pressure ; The diffusion furnace 5 in a constant te...
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