Crystal coating light-emitting diode and producing method thereof

Abstract

A method for preparing luminous diode of polycrystalline type includes using soft transparent binding layer to stick transparent base material with luminous diode polycrystalline structure on base material, then removing off base material to transfer luminous diode polycrystalline structure on transparent base material, platform - etching said structure to let said structure form on the first and the second top surfaces and simultaneously to expose n type and p type of semiconductor layers, forming metal reflecting and blocking layer on said structure and preparing electrode on blocking layer.

Description

technical field [0001] The invention relates to a flip-chip light-emitting diode and a manufacturing method thereof, in particular to a flip-chip light-emitting diode capable of increasing light output intensity and a manufacturing method thereof. Background technique [0002] Light Emitting Diodes (LEDs) are widely used in lighting sources and display technologies due to their advantages of low production cost, simple structure, low power consumption, small size and easy installation. [0003] Generally, the traditional light-emitting diode is to directly fabricate the epitaxial structure of the light-emitting diode on the substrate, and the cathode electrode and the anode electrode are respectively fabricated on the side of the epitaxial structure of the light-emitting diode and the substrate side. Although such a structure has better The effect of current distribution, but it will lead to an increase in the packaging area of ​​the light emitting diode. Therefore, flip ch...

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Problems solved by technology

[0005] However, due to the light emission of the flip-chip LED, when it is output upward, it will be absorbed by the upper substrate, and cannot penetrate the substrate, and then output to the outside of the LED.

Therefore, although the flip-chip LED has advantages in packaging, it actually causes the light output intensity of the flip-chip LED to decrease.

[0006] In addition, because the improvement of the brightness of the LED is always the main development trend of the LED technology at present, but generally except for the part where the LED emits light directly upward, the light emitted from other directions will be partially absorbed by the material below the LED. However, it cannot be effectively used as a source of light output, especially the light emitting diode of the flip-chip type. The part emitted to the bottom of the light emitting diode is extremely easy to be blocked by electrodes or scattered.

Therefore, the light output intensity of the light-emitting diode mainly depends on the light-emitting characteristics of the light-emitting diode itself, so that the improvement of the light output intensity of the light-emitting diode is limited.

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