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Preparation of gallium nitride based epitaxial film

A gallium nitride-based, epitaxial film technology, applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as high requirements for lasers and laser lift-off systems, and limited speed of laser lift-off processing , to achieve the effect of fast low-power laser peeling, reducing the probability of spot repetition, and spot enlargement

Inactive Publication Date: 2009-08-26
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This requires that the threshold energy density of the laser irradiation system for laser exfoliation under normal pressure is about 400mJ / cm 2 , that is, the area of ​​the focused laser spot is also small, and not only the requirements for the laser and the laser lift-off system are high, but also the speed of the laser lift-off process is limited

Method used

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  • Preparation of gallium nitride based epitaxial film
  • Preparation of gallium nitride based epitaxial film
  • Preparation of gallium nitride based epitaxial film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Such as figure 1 The fully enclosed low-vacuum laser lift-off system is shown, and the specific scheme includes the following steps:

[0038] 1. The GaN epitaxial film is grown on the sapphire substrate by metal-organic vapor phase epitaxy.

[0039]2. Glue the P side of the gallium nitride-based epitaxial film grown on the sapphire substrate to the Si sheet, glass or copper sheet with epoxy resin, and place it in a vacuum chamber to remove the bubbles in the epoxy resin to ensure that the GaN-based epitaxial film Uniform void-free contact with the support substrate.

[0040] 3. Fix the gallium nitride-based epitaxial film sample 5 grown on the sapphire substrate adhered to the support substrate on the object glass 6, put the sample 5 and the electric platform 7 into the vacuum chamber 8, and open the valve 9. Use the mechanical pump 10 to evacuate the vacuum chamber 8 to 4-5 Pa.

[0041] 4. Adjust the output energy density of the excimer laser to 400mJ / cm 2 , the pu...

Embodiment 2

[0046] Such as figure 2 As shown, a semi-closed low-vacuum laser lift-off system is used, and the specific scheme includes the following steps:

[0047] 1. A GaN epitaxial film is grown on a sapphire substrate by metal organic vapor phase epitaxy (MOCVD).

[0048] 2. The P side of the gallium nitride-based epitaxial film grown on the sapphire substrate is glued to the Si sheet, glass or copper sheet with epoxy resin, and placed in a vacuum chamber to remove the air bubbles in the epoxy resin to ensure that the GaN-based epitaxial film is in good contact with the epitaxial film. Uniform void-free contact to the support substrate.

[0049] 3. Fix the gallium nitride-based epitaxial film sample 5 grown on the sapphire substrate adhered to the support substrate on the object glass 6, and fix the rear end of the vacuum chamber 8 on the electric platform 7.

[0050] 4. Open the valve 9, and use the mechanical pump 10 to evacuate the vacuum chamber 8 to 4-5 Pa.

[0051] 5. Adjust...

Embodiment 3

[0056] Such as image 3 The fully enclosed high-vacuum laser lift-off system is shown, and the specific scheme includes the following steps:

[0057] 1. A GaN epitaxial film is grown on a sapphire substrate by metal organic vapor phase epitaxy (MOCVD).

[0058] 2. The P side of the gallium nitride-based epitaxial film grown on the sapphire substrate is glued to the Si sheet, glass or copper sheet with epoxy resin, and placed in a vacuum chamber to remove the air bubbles in the epoxy resin to ensure that the GaN-based epitaxial film is in good contact with the epitaxial film. Uniform void-free contact to the support substrate.

[0059] 3. Fix the gallium nitride-based epitaxial film sample 5 grown on the sapphire substrate adhered to the support substrate on the object glass 6, and use the heating device 7 to heat the sample 5, and the heating temperature is 400 ° C. The power is 8. Put the sample, heating device and motorized platform 9 into the vacuum chamber 10 together. ...

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Abstract

The invention is a preparing method for a GaN-based epifilm, which improves the laser stripping speed of GaN, and lowers the threshold power density of the GaN laser stripping. The GaN-based epifilm is grown on the sapphire substrate, its P side is stuck on a substrate supporting material or bonded on the substrate supporting material by metal; the moving speed of the electric platform is set; the epifilm is fixed on an object carrier, put into a vacuum chamber to be vacuumized; the focusing spot of a laser beam through an optical system is adjusted, the laser beam radiates the epifilm back side, the laser spot scans the epifilm to decompose GaN on the boundary surface of the sapphire and GaN, the GaN-based epifilm and the sapphire substrate are separated; a vacuum pump is closed after the laser scans the GaN-based epifilm grown on the sapphire substrate; the epifilm is immersed into hydrochloric acid to remove Ga on the surfaces of GaN and the sapphire, so that the sapphire substrate drops off.

Description

technical field [0001] The invention relates to a gallium nitride-based epitaxial film, in particular to a method for laser stripping a GaN epitaxial film on a sapphire substrate by lowering the pressure. Background technique [0002] GaN and its related group III nitride materials can obtain continuously adjustable band gap energy from 1.9eV (InN) to 6.2eV (AlN) by adjusting the alloy composition. Therefore, group III nitrides can cover from ultraviolet light to visible light Such a wide range of spectrum is why they are the preferred materials for preparing blue and green light-emitting diodes, ultraviolet detectors and semiconductor lasers. [0003] Because it is difficult to obtain large-sized GaN single crystal materials, GaN devices are usually fabricated by heteroepitaxy using sapphire as a substrate. However, as a heterogeneous substrate, sapphire has disadvantages such as high lattice mismatch, high thermal mismatch, poor thermal conductivity, and poor electrical c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/762H01L21/84H01L33/00H01L31/18H01S5/00
CPCY02P70/50
Inventor 刘宝林黄瑾郑清洪
Owner XIAMEN UNIV
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