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Method for preparing thin film type photon lattice structure GaN base LED

A technology of light emitting diodes and photonic lattices, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as small tolerances, and achieve the effect of reducing requirements and improving light extraction efficiency

Inactive Publication Date: 2009-11-18
江苏华功半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the performance of the photonic lattice is very sensitive to changes in its structural parameters, the tolerance of structural control in the optical wavelength range is very small. How to accurately prepare the submicron-scale photonic lattice of GaN-based light-emitting diodes, with the current technology, great challenge for people

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  • Method for preparing thin film type photon lattice structure GaN base LED
  • Method for preparing thin film type photon lattice structure GaN base LED
  • Method for preparing thin film type photon lattice structure GaN base LED

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Embodiment Construction

[0029] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0030] 1. Preparation of GaN-based light-emitting diode (LED) chips

[0031] GaN-based LED materials including non-doped GaN layers are grown on sapphire substrates by epitaxial technology, such as figure 1 shown. That is, a layer of non-doped GaN is grown on the sapphire substrate with a thickness of 0.1-2 μm. Then grow an n-type GaN layer, multiple quantum wells, and a p-type GaN layer on the non-doped GaN layer, and prepare GaN-based light-emitting diodes (LEDs) by photolithography, dry etching, and metal deposition to form a sapphire substrate. on GaN-based chips.

[0032] Wherein, the stacking sequence of the n-type GaN layer, the multiple quantum wells and the p-type GaN layer determines whether the prepared light-emitting diode is a front-chip type or a flip-chip type.

[0033] The sapphire substrate can be polished or unpolished, wit...

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Abstract

The invention discloses a method for preparing a GaN-based light-emitting diode with a thin-film photonic lattice structure, and belongs to the technical field of GaN-based light-emitting diodes. The method comprises: growing a multilayer GaN-based light-emitting diode material on a sapphire substrate, including an undoped GaN layer, an n-type GaN layer, multiple quantum wells, and a P-type GaN layer; preparing a GaN-based light-emitting diode material on a GaN-based light-emitting diode material. Light-emitting diode; a layer of organic polymer is uniformly coated on the sapphire substrate; a photonic lattice structure is formed on the organic polymer by using an imprint template; from the side of the organic polymer with a photonic lattice structure, the laser irradiates the The sapphire substrate is separated from the non-doped GaN layer, and at the same time, the non-doped GaN layer material forms a photonic lattice structure, thereby obtaining a GaN-based light-emitting diode with a thin-film photonic lattice structure. The invention is suitable for preparing GaN-based light-emitting diodes with a thin-film photonic lattice structure in a large area.

Description

technical field [0001] The invention relates to a preparation method of a GaN-based light-emitting diode (LED), in particular to a preparation method of a thin-film photonic lattice structure GaN-based light-emitting diode. Background technique [0002] The emergence and development of GaN-based LEDs has caused a revolution in solid-state lighting that has swept the world. Due to the limitation of internal total reflection, most of the light generated in LEDs is confined inside high-refractive index semiconductors. How to improve luminous efficiency is a challenge for the development of LEDs. The biggest challenge, theoretical research shows that the bottleneck to break through in the realization of semiconductor lighting is to improve luminous efficiency, which requires breakthroughs in science and technology. Since the GaN film is grown on a heterogeneous substrate such as sapphire, the poor quality of the material leads to limited space for improving the internal quantum ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 康香宁章蓓包魁代涛张国义
Owner 江苏华功半导体有限公司
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