Positive photosensitive resist release agent compositions

A photoresist and stripper technology, applied in the processing of photosensitive materials, etc., can solve the problems of unsatisfactory stripping performance, large resist damage, harsh etching conditions, etc., to achieve excellent solubility and stripping, low temperature Excellent peeling performance and favorable working environment
CN101017333AInactive Publication Date: 2007-08-15DONGJIN SEMICHEM CO LTD
0 Cites 13 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
DONGJIN SEMICHEM CO LTD
Publication Date
2007-08-15
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

This invention discloses one positive light anti-erosion agent peeling agent combination, which comprises the following parts: a, occupying organic amine for weight of 10 to 50; b, monoethylene glycol monoalkyl ether for weigth of 0 to 70 percent; c, non photon electrode solvent for weight of 20 to 90; d, based on the said three component total weight for 0.01 to 10 non-ion surface active agent. This invention relates to positive light anti-erosion peel agent combination to etch process with excellent solve property and peeling property of pattern film for light resistance.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a positive-type photoresist stripper composition which has excellent solubility and stripping properties for a photoresist pattern film degraded by etching treatment etc., and which is used for cleaning after being mixed with water In the case of rinse, the corrosion to the aluminum or copper substrate is small and the evaporation is small, so it is not only beneficial to the working environment, but also has high safety, and can be cleaned with water, especially the low-temperature peeling performance is excellent, so it has a high practicality. Background technique

[0002] Generally, semiconductor devices (Device) such as transistors, integrated circuits (ICs), large scale integrations (LSIs), and very large scale integrations (VLSIs), and liquid crystal display devices are prepared by photolithography. For example, in a semiconductor device, a photoresist film is formed on an inorganic substrate such as a silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More