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Method for controlling crystal granularity of FeS2 film

A control method and grain size technology, applied in the field of chemistry, can solve the problems of complex process, high substrate cost, and mixed influence of vulcanization parameters, and achieve high-efficiency photoelectric conversion process, low substrate cost, and crystal grain size. Wide range of effects

Inactive Publication Date: 2007-10-03
ZHEJIANG UNIV
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  • Application Information

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Problems solved by technology

Although some techniques involve FeS 2 The method of controlling the grain size of the film, but it is necessary to change the vulcanization parameters and film thickness at the same time to change the grain size, which will cause the influence of the vulcanization parameters on the physical properties of the film to be mixed, and cannot reflect the independent effect of the grain size change, or even Cover the effect of grain size itself on the physical properties of the film, and the process is more complicated
Some technologies are changing FeS 2 Although the process of film grain size does not involve the change of vulcanization parameters, an opaque substrate (such as single crystal silicon) is used to control the crystallization process, so that FeS used in photoelectric conversion applications 2 The film cannot receive the light transmitted by the substrate and lacks practicality, and the cost of the substrate is high

Method used

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  • Method for controlling crystal granularity of FeS2 film
  • Method for controlling crystal granularity of FeS2 film

Examples

Experimental program
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Effect test

Embodiment 1

[0027] The thickness is 0.9mm, the area is 20×15mm 2 The glass slide was used as the substrate for the microscopic analysis of the microscopic analysis. First, it was ultrasonically cleaned in acetone solution for 15 minutes, and then ultrasonically cleaned in ethanol solution for 15 minutes. After ultrasonic cleaning, rinse with deionized water 5 times to remove residual organic solution, and then dry at 150°C for 6 hours.

[0028] Place the treated film-carrying substrate in the sputtering chamber of the magnetron sputtering device. The Fe target for sputtering has a purity of 99.9% and a thickness of 0.8mm. The sputtering chamber is evacuated until the residual gas pressure is lower than 4.8× 10 -3 Pa and filled with argon for 5 times, using 60W sputtering power, controlling the sputtering time in the range of 0.5-26min to obtain an amorphous pure iron film with a thickness in the range of 45-150nm.

[0029] The sublimated sulfur powder (purity: 99.5%) and the amorphous p...

Embodiment 2

[0033] The preparation process of the film-loaded substrate is the same as in Example 1.

[0034] Place the treated film-carrying substrate in a vacuum thermal evaporation device, the purity of Fe powder for evaporation is 99.9%, and the evaporation chamber is evacuated until the residual gas pressure is lower than 5×10 -3 Pa and filled with argon for 5 times, using 9kW vapor deposition electron beam power, controlling the vapor deposition time in the range of 0.5-12min to obtain an amorphous pure iron film with a thickness in the range of 25-130nm.

[0035] The sulfide treatment process of the amorphous pure iron film is the same as in Example 1.

[0036] FeS obtained after sulfidation 2 The thickness of the film is 70-480nm, and the corresponding average grain diameter of the film is 30-65nm in the cross section and 35-95nm in the surface of the film.

[0037] The above process obtained by FeS 2 The control relationship between film thickness and grain size is shown in Fi...

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Abstract

The present invention discloses method of controlling crystal granularity of FeS2 film. By means of controlling the power of magnetically controlled sputtering or vaporization coating electronic beam and the deposition time, non-crystalline iron film of 25-150 nm thickness is obtained; and through further sulfurizing reaction at 400 deg.c for 20 hr, FeS2 film of 70-560 nm thickness, average cross section crystal grain diameter of 30-70 nm and average surface crystal grain diameter of 35-110 nm is obtained. The present invention has transparent carrier film with low cost and relatively great crystal grain size changing range, is favorable to the photoelectronic conversion of FeS2 film. The technology of the present invention can provide sample with optimized FeS2 film structure and high photoelectronic conversion performance.

Description

technical field [0001] The invention belongs to the field of chemistry, and relates to the production of a photoelectric material, specifically a FeS 2 Control method of film grain size. Background technique [0002] With the advancement of science and technology and the development of human civilization, primary energy sources such as coal, oil and natural gas are increasingly unable to meet the needs. Moreover, a large amount of harmful gas will be released during the use of disposable energy, which will destroy the environment on which human beings live. Therefore, among various renewable resources, solar energy has become the focus of new energy development. One of the main forms of development is to effectively convert sunlight energy into electrical energy for the benefit of mankind. [0003] A solar cell is an effective device that directly converts sunlight energy into electrical energy. The photoelectrode material is the core of the solar cell, and some new solar ...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/54C23C14/06
Inventor 孟亮刘艳辉
Owner ZHEJIANG UNIV
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