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A method for manufacturing of enhancement type ZnO channel layer thin film transistor with ammonia doping

A thin-film transistor and channel layer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor doping uniformity, reduce carrier concentration, limit application and promotion, and achieve controllability Good, simple preparation process, good process compatibility

Inactive Publication Date: 2007-10-24
XI AN JIAOTONG UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

This method is a kind of solid-state doping, the doping ratio is not easy to control and the doping uniformity is poor
The second method is high-temperature heat treatment (temperature up to 1400°C), which crystallizes the ZnO film into a single crystal film, thereby reducing the intrinsic carrier concentration. Because the higher heat treatment temperature is not compatible with the glass process, the application of this method is limited. Application and promotion

Method used

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  • A method for manufacturing of enhancement type ZnO channel layer thin film transistor with ammonia doping
  • A method for manufacturing of enhancement type ZnO channel layer thin film transistor with ammonia doping
  • A method for manufacturing of enhancement type ZnO channel layer thin film transistor with ammonia doping

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Embodiment 1

[0024] This embodiment is to prepare a ZnO channel layer thin film transistor.

[0025] First, select a P-type Si sheet (p-Si) with a resistivity of 1-10Ω·cm as the substrate, and use it as the gate of the thin film transistor, and grow 180nm on the substrate by using a conventional dry oxygen oxidation process on the p-Si surface. Thick silicon dioxide acts as an insulating layer for thin-film transistors (Figure 1). Or directly use ITO glass as the substrate, the ITO film on the glass as the gate, and re-grow HfO on the ITO film 2 、Al 2 o 3 or Y 2 o 3 The insulating layer of a dielectric film.

[0026] Put the above-mentioned substrate grown with an insulating layer into the vacuum chamber of the vacuum system, and pre-evacuate the vacuum system to 10 -6 Pa, and then slowly heat the substrate to make the substrate temperature reach 400°C, oxygen (O 2 ) and ammonia (NH 3 ) under the condition of adjusting the ratio of 1:1, deposit high-quality nitrogen-doped ZnO chann...

Embodiment 2

[0038] The difference between this embodiment and embodiment 1 is that the ZnO target in step 3 is replaced with a Zn-Mg-O, Zn-Sn-O or Zn-In-O target, and the others are the same as in embodiment 1, namely Nitrogen-doped Zn-Mg-O, Zn-Sn-O, and Zn-In-O thin films are grown under a mixed atmosphere of ammonia and oxygen as the channel layer of ZnO thin film transistors, which can also obtain excellent electrical properties at low temperatures. Enhanced device. The electrical test results still have electrical properties similar to those in Figure 2, Figure 3, and Figure 4.

Embodiment 3

[0040] The difference between this embodiment and embodiment 1 is that the Si-based substrate in step 1 is changed to ITO glass, and the ITO film is used as the grid. Others are the same as in embodiment 1, and a layer of high dielectric constant insulating Thin films such as HfO 2 、Al 2 o 3 or Y 2 o 3 etc., and then grow a nitrogen-doped ZnO film on the insulating layer and prepare source and drain electrodes. The electrical test results still have electrical properties similar to those in Figure 2, Figure 3, and Figure 4.

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Abstract

The disclosed preparation method for enhanced-type ZnO channel TFT by doping N2 comprises: in mixed O2 and NH3, depositing N-doped ZnO channel film at lower temperature, doping a little N-ion to reduce N-type carrier concentration and holding the high electron mobility. This invention is simple and well controlled, can be used to prepare the ZnO, ZnMgO, Zn-Sn-O or Zn-In-O TFT, and provides a new way for high-performance panel display array.

Description

technical field [0001] The invention belongs to the technical field of flat panel display (FPD), and relates to a method for preparing a ZnO thin film transistor, in particular to a method for preparing an enhanced ZnO channel layer thin film transistor by ammonia gas doping. Background technique [0002] With the advent of the information age, flat-panel display devices have developed unprecedentedly as a fast information terminal, among which the active matrix drive display with thin-film transistors (TFT) as switching elements has become the best among many flat-panel display technologies. The introduction of thin film transistors makes each pixel independent of each other without crosstalk, greatly improving the resolution of display devices and realizing large-capacity information display. The properties of the semiconductor channel layer in thin film transistors have a decisive impact on device performance and manufacturing process. In recent ye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/203
Inventor 张景文张新安侯洵王东毕臻边旭明
Owner XI AN JIAOTONG UNIV
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