Direct synthesis process of hydrophobic nanometer silica line with ZnS powder

A technology of silica and nanowires, which is applied in the field of nanomaterials, can solve problems such as complex preparation procedures, high cost, and limited application range, and achieve the effects of simple equipment process, high hydrophobicity, and low price

Inactive Publication Date: 2007-11-07
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its shortcoming is: the preparation procedure is complicated,

Method used

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  • Direct synthesis process of hydrophobic nanometer silica line with ZnS powder
  • Direct synthesis process of hydrophobic nanometer silica line with ZnS powder

Examples

Experimental program
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Effect test

Example Embodiment

[0026] Example 1

[0027] Place a ceramic boat containing 3 clean silicon wafers (rectangular silicon wafers 1×1 cm) in the center of a horizontal quartz tube furnace, and fix 5 g of solid ZnS powder on the side of the quartz tube where the gas flows. The temperature was increased to 1350°C at a rate of 10°C / min. At the beginning of the temperature rise, argon with a gas flow rate of 50ml / min was introduced; at the reaction temperature of 1350℃, the gas flow rate in the cavity was maintained, and the reaction continued for 2 hours. After the reaction, the reaction product was taken out and a large amount of A sample of disordered silica nanowires is shown in Figure 1. It can be seen that a large number of disordered silica nanowires are produced on the surface of the silicon wafer. The synthesized silica nanowires and 0.05ml of perfluorosilane were sealed and put into a stainless steel tank, and the evaporation reaction was carried out at 150 degrees for 3.0 hours to obtain superh...

Example Embodiment

[0028] Example 2

[0029] Place a ceramic boat containing 3 clean silicon wafers (rectangular silicon wafers 1×1 cm) in the center of a horizontal quartz tube furnace, and fix 5 g of solid ZnS powder on the side of the quartz tube where the gas flows. The temperature was increased to 1350°C at a rate of 10°C / min. At the beginning of the temperature rise, argon with a gas flow of 500ml / min was introduced; at the reaction temperature of 1350℃, the gas flow in the cavity was maintained, and the reaction continued for 3 hours. After the reaction, the reaction product was taken out and a large amount of Disordered silica nanowire sample. The synthesized silica nanowires and 0.1ml of perfluorosilane were sealed and put into a stainless steel tank, and the vapor deposition reaction was carried out at 150 degrees for 3.0 hours to obtain a superhydrophobic two with a contact angle of 145 degrees. The silicon oxide nanowires are shown in Fig. 2. As can be seen in the figure, the silicon dio...

Example Embodiment

[0030] Example 3

[0031] Place a ceramic boat containing 3 clean silicon wafers (rectangular silicon wafers 1×1 cm) in the center of a horizontal quartz tube furnace, and fix 5 g of solid ZnS powder on the side of the quartz tube where the gas flows. The temperature was increased to 1350°C at a rate of 10°C / min. At the beginning of the temperature rise, argon with a gas flow of 200ml / min was introduced; at the reaction temperature of 1350℃, the gas flow in the cavity was maintained, and the reaction continued for 5 hours. After the reaction, the reaction product was taken out and a large amount of Disordered silica nanowire sample. The synthesized silica nanowires and 0.2ml of perfluorosilane were sealed and put into a stainless steel tank, and the vapor deposition reaction was carried out at 150 degrees for 3.0 hours to obtain a superhydrophobic second with a contact angle greater than 140 degrees. Silicon oxide nanowires.

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Abstract

The present invention is direct synthesis process of hydrophobic nanometer silica line with ZnS powder, and belongs to the field of nanometer material technology. The present invention adopts silicon chip as the reaction substrate and silicon source, solid ZnS powder as reaction supplementary material and inert gas argon as the protecting gas and carrier gas to grow nanometer silica line on the silicon chip, and vaporization coats one layer perfluorosilane on the surface of synthesized nanometer silica line to obtain hydrophobic nanometer silica line with contact angle greater than 140 deg. The process is simple and practical, uses no metal catalyst, and has no environmental pollution and high safety, and the product has high hydrophobicity and wide application.

Description

technical field [0001] The invention relates to a method in the technical field of nanometer materials, in particular to a method for directly synthesizing silicon dioxide nanowires with hydrophobic properties by using ZnS powder. Background technique [0002] Semiconductor nanowires exhibit excellent performance in many aspects due to their small size and quantum confinement effects different from bulk materials; at the same time, with the gradual reduction of the line width of large-scale integrated circuits, the research on semiconductor nanofibers is particularly important. Importantly, semiconductor nanowires show good potential for future compatibility with integrated circuit processes. Therefore, this will make the research on the synthesis and application of silicon and silicon oxide nanowires be widely carried out. So far, the synthesis of silicon and silicon oxide nanowires mainly includes VLS method, oxide-assisted growth method, pure chemical method and so on ac...

Claims

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Application Information

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IPC IPC(8): C01B33/113B82B3/00
Inventor 牛俊杰王健农许前丰
Owner SHANGHAI JIAO TONG UNIV
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