Diamond anvil for electrical quantity in-situ measurement and its production method

A diamond-to-anvil, in-situ measurement technology, applied in measurement devices, scientific instruments, material analysis by electromagnetic means, etc., can solve the problems of difficult temperature increase, large temperature gradient, temperature loss, etc., to prevent heat loss. , measurement accuracy guarantee, the effect of reducing the temperature gradient

Inactive Publication Date: 2007-11-28
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the diamond-anvil sample cavity is very narrow, and it is very difficult to arrange the electrodes and the heat insulating layer in such a small space, and it has not been effectively solved so far.
Therefore, the study of the electrical properties of substances at high temperatures on the diamond anvil

Method used

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  • Diamond anvil for electrical quantity in-situ measurement and its production method
  • Diamond anvil for electrical quantity in-situ measurement and its production method
  • Diamond anvil for electrical quantity in-situ measurement and its production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1 Illustrates the overall structure of the present invention in conjunction with the accompanying drawings

[0029] Refer to Fig. 1 and Fig. 2 for the overall structure of a diamond anvil of the present invention.

[0030] In Figure 1 and Figure 2, 1 is the alumina heat insulation layer, 2 is the sealing gasket, 3 is the sample chamber, 4 is the electrode, 5 is the electrode lead, there are four A, B, C, D, 6 is the protective layer, It is made of alumina material.

[0031] In FIG. 1 , two diamond anvil surfaces face each other to form a diamond counter-anvil. There is a sealing gasket 2 between the two diamond anvil surfaces, so that the space in the middle forms a sample cavity 3 . The upper diamond anvil is only deposited with an aluminum oxide heat insulating layer 1 on its anvil surface and side surfaces, the lower diamond anvil has four or two electrodes 4, and electrode leads 5 are welded at the ends of the electrodes 4 on the side of the diamond anvi...

Embodiment 2

[0035] Embodiment 2 The fabrication of the diamond pair anvil for in-situ measurement of electrical quantities of the present invention

[0036] Step 1: Soak two diamond anvils in a mixture of acetone and alcohol for 20 minutes to remove surface stains, and rinse with deionized water after taking them out.

[0037] Step 2: After drying, put the diamond anvil into the vacuum chamber, and use the magnetron sputtering method to deposit an aluminum oxide film on the surface of the two diamonds as a heat insulating material, that is, form an aluminum oxide heat insulating layer 1 . In order to increase the adhesion between the diamond and the film, the substrate is kept at 300 degrees Celsius during the sputtering process, and metal aluminum is used as the target material during the sputtering process, and oxygen and argon with a flow ratio of 30:2.4 are used as the working gas , the pressure in the vacuum chamber is always kept at 1Pa during the coating process.

[0038] The abov...

Embodiment 3

[0051] Example 3 An example of the thermal insulation effect of alumina—the difference between the presence and absence of the thermal insulation layer 1 of alumina.

[0052] The olivine sample was selected to test the thermal insulation performance of diamond on the anvil. The results obtained are shown in Figure 3 and Figure 4. Fig. 3 is the radial temperature distribution of the sample chamber measured without any heat insulating layer, and Fig. 4 is the radial temperature distribution of the sample chamber when a 3 micron alumina heat insulating layer 1 is introduced. The maximum temperature difference in the temperature uniform area (the area marked by the horizontal line in the figure) is greater than 120 degrees without the alumina heat insulation layer, and the maximum temperature difference is less than 50 degrees with the alumina heat insulation layer 1, and the range of uniform temperature is from without alumina heat insulation ~45 microns in layers, increasing to...

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Abstract

The invention relates to a diamond anvil cell for measuring electronic quantity in situ and the manufacturing method, belonging to the technology field of high-temperature and high-pressure device. Heat insulation layer of aluminum oxide 1, two to four mutual insulated electrodes 4 and protecting layer of aluminum oxide 6 are deposited in turn on anvil face and side face of diamond anvil. The distribution of each electrode 4 is from the anvil face to the side face. The end of electrode 4 at the anvil face is bare and is in the sample cavity 3 of diamond anvil cell. The end of electrode 4 at the side face is bare and is connected with electrode leader 5. Heat insulation layer of aluminum oxide 1, electrode 4, protecting layer 6 are integrated on the diamond anvil in turn by film deposition technology and photolithographic method. Heat insulation layer and electrode designed in the invention can prevent loss of heat quantity effectively and decrease temperature gradient in sample cavity obviously so that the measurement of electronic quantity can be realized under high temperature and high pressure and measuring accuracy can be guaranteed.

Description

technical field [0001] The invention belongs to the technical field of high-temperature and high-pressure devices, and in particular relates to an adiabatic diamond counter-anvil used for in-situ electrical quantity measurement under high-temperature and high-pressure conditions and a manufacturing method thereof. Background technique [0002] The diamond anvil has become one of the important means for people to obtain high pressure conditions. Moreover, combined with the laser heating system, high temperature and high pressure conditions can be achieved in a narrow sample cavity, and even the environment inside the earth can be simulated. Therefore, the laser heated diamond anvil (LHDAC) device has been widely used in the research of phase transition, melting point and P-V-T equation of state of substances. [0003] High temperature and high pressure X-ray diffraction technology can provide very detailed information of substances under high temperature and high pressure co...

Claims

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Application Information

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IPC IPC(8): G01N27/00
Inventor 高春晓李明韩永昊邹广田贺春元彭刚李冬妹
Owner JILIN UNIV
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