Preparation method of diamond surface graphics

A surface pattern and diamond technology, which is applied in the field of diamond processing, can solve the problems of laser method that the processing capacity and processing efficiency of thin lines need to be improved, and it is difficult to prepare thin films, etc., and achieve short preparation time, easy operation, and high etching selection ratio. Effect

Inactive Publication Date: 2008-02-06
WUHAN INSTITUTE OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the disadvantages of the above preparation methods are: the seeding method is difficult to prepare a thicker film, and the mask method is often limited to the surface processing of single crystal diamond due to the preferential etching at the grain boundary. Processing efficiency also needs to be improved

Method used

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  • Preparation method of diamond surface graphics

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Experimental program
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Effect test

Embodiment 1

[0054] As shown in Figure 1, the preparation method of diamond surface patterning, it comprises the steps:

[0055] 1). Cleaning of the surface of the diamond sample:

[0056] Put the polycrystalline diamond film sample (diameter 30 mm, thickness 0.5 mm, surface roughness Ra<0.3 μm, i.e. diamond 4 in the figure) prepared by chemical vapor deposition method into anhydrous ethanol for ultrasonic cleaning 8 minutes, then ultrasonically washed with distilled water for 8 minutes, taken out, and baked at a temperature of 120°C for 5 minutes; put the baked diamond sample into a microwave plasma chemical vapor deposition device, and use microwave-excited plasma 1 The surface of the sample is further cleaned, and the process is as follows: working gas: hydrogen; microwave power: 300W; working pressure: 1.5kPa; processing temperature: 200°C; Time: 8 minutes. After the treatment, the diamond sample was cooled to room temperature and taken out.

[0057] 2). Preparation of the isolation...

Embodiment 2

[0072] The preparation method of diamond surface patterning, it comprises the steps:

[0073] 1) Cleaning of the diamond surface:

[0074] The diamond is selected from single crystal diamond. The diamond with a flat surface is first washed with alcohol (isopropanol) for 5 minutes, then ultrasonically washed with distilled water for 5 minutes, and then baked at 100°C for 20 minutes, and the diamond is placed in a vacuum chamber In the process, the working gas is introduced, and the working gas is argon; the working gas is excited by electric energy (such as a direct current method) to discharge and generate plasma, and the diamond surface is cleaned at a temperature of 200°C for 5 minutes, and then cooled to room temperature, Take out spare;

[0075] The process of using electric energy to stimulate plasma generation: such as the DC method, is to set two electrodes with a distance of 3-25 cm in a vacuum chamber, and these two electrodes are respectively connected to the positi...

Embodiment 3

[0093] The preparation method of diamond surface patterning, it comprises the steps:

[0094] 1) Cleaning of the diamond surface:

[0095] The diamond is selected from chemical vapor deposited polycrystalline diamond. The diamond with a flat surface is first washed with alcohol (butanol) for 20 minutes, then ultrasonically washed with distilled water for 20 minutes, and then baked at a temperature of 150 ° C for 30 minutes. In the vacuum chamber, radio frequency is used to excite the working gas to discharge it to generate plasma: in a vacuum chamber, two electrodes are set, and these two electrodes are respectively connected to the two poles of the radio frequency power supply, and the working gas (such as Ar+H 2 =10+10sccm), in the range of 0.6-20Pa, adjust the RF matcher to generate discharge between the two electrodes, the RF power is generally between 80-200W; clean the diamond surface at 300°C for 10 minutes; then cool to room temperature, remove and set aside.

[0096...

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Abstract

The present invention relates to a preparation method for diamond surface visualization, and is characterized in that the preparation method includes the following steps: firstly, the cleanness of the diamond surface; secondly, the preparation of the insulated layer of the diamond surface; thirdly, the preparation of the photosensitive resist pattern of the insulated layer surface; fourthly, the preparation of the insulated layer pattern of the diamond surface; fifthly, wiping off photosensitive resist remained on the surface of the diamond insulated layer; sixthly, the preparation of a metal folium used for sculpturing the diamond surface; seventhly, the diamond provided with the metal folium on the surface prepared in the sixth step is put in a vacuum chamber, and inlet working gas, a plasma body is produced by blazing the electric energy or the electromagnetic energy, under the temperature of 800 to 900 DEG C, the diamond is sculptured, thus the diamond with visualization surface can be obtained; eighthly, the diamond with visualization surface can be obtained by eliminating the metal folium remained on the diamond surface. The present invention has the advantages of prepared extensively, easy to operate, short time for preparation, and no obvious preferential mechanical erosion to the crystal boundary of the polycrystalline diamond.

Description

technical field [0001] The invention belongs to the field of diamond processing, in particular to a method for preparing diamond surface patterning. Background technique [0002] Diamond film is a new type of functional material with great application potential. Its unique physical and chemical properties make it widely used in high-tech fields such as microelectronics, microsensors, micromechanics and micro-opto-electromechanical systems. [1，2] . However, diamond thin films are difficult to process due to their extremely high hardness and chemical stability. In order to obtain the fine structure required by the above-mentioned application fields, systematic and in-depth research in related fields is still required. [0003] The methods currently used for patterning diamond films include: seeding method selective growth technology, mask method selective growth technology, reactive ion etching, ion beam etching technology, and laser etching technology. [0004] The seeding ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F1/00C04B41/53
Inventor 满卫东汪建华马志斌王升高王传新谢鹏孙蕾
Owner WUHAN INSTITUTE OF TECHNOLOGY
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