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Indium oxide/zinc oxide/magnesium oxide sputtering target and transparent conductive film

A transparent conductive film and sputtering target technology, which is applied in the direction of oxide conductors, sputtering plating, circuits, etc., can solve the problems of difficult sputtering, low conductivity of sputtering targets, and low etchability

Inactive Publication Date: 2008-02-13
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are problems in that the sputtering target used for forming the transparent conductive film has low conductivity and sputtering is difficult, or the formed transparent conductive film is crystalline, so the etchability is not so high.

Method used

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  • Indium oxide/zinc oxide/magnesium oxide sputtering target and transparent conductive film
  • Indium oxide/zinc oxide/magnesium oxide sputtering target and transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Target 1

[0065] In the average particle size of 1 μm or less 2 o 3 Powder, ZnO powder with an average particle size of 1 μm or less, and MgO powder with an average particle size of 1 μm or less were weighed and mixed in a predetermined ratio, then put into a resin pot, and water was added to conduct a test using hard ZrO. 2 The balls are mixed in a wet ball mill. At this time, the mixing time was set to 20 hours. By this mixing, the obtained mixed slurry was taken out, filtered, dried and granulated. The resulting granulate was put into a forming die and applied 3 ton / cm in a cold isostatic press 2 Formed under high pressure to obtain a molded body.

[0066] Then, the obtained molded body was sintered as shown below. First, in the sintering furnace, place the molded body so that every 0.1m in the sintering furnace 3 Oxygen was inflowed at a rate of 5 l / min. In this atmosphere, the molded body was sintered at 1470° C. for 5 hours. At this time, the temperature...

Embodiment 2

[0082] Target 2

[0083] Except for In with an average particle size of 1 μm or less 2 o 3 powder, ZnO powder with an average particle diameter of 1 μm or less, and MgO powder with an average particle diameter of 1 μm or less in the mixing ratio, the powders were mixed, molded, and sintered by the same method as in Example 1. , a sintered body was obtained. The relative density of the obtained sintered body was obtained by the same method as in Example 1 above. The obtained relative density is shown in FIG. 1 .

[0084] In addition, as in Example 1, the contents of Zn and Mg in the obtained sintered compact were quantitatively analyzed by ICP emission spectrometry, and it was confirmed that the feed composition when mixing the raw material powders was also maintained in the sintered compact. At this time, the values ​​of the specific composition ratios in the sintered body confirmed are shown in FIG. 1 .

[0085] Then, in the same manner as in Example 1, a backing plate w...

Embodiment 3

[0091] Target 3

[0092] Except for In with an average particle size of 1 μm or less 2 o 3 powder, ZnO powder with an average particle diameter of 1 μm or less, and MgO powder with an average particle diameter of 1 μm or less, the powders were mixed and molded in the same manner as in Examples 1 and 2. , and sintered to obtain a sintered body. The relative density of the obtained sintered body was obtained by the same method as in Examples 1 and 2 above. The relative density obtained at this time is shown in FIG. 1 .

[0093] In addition, as in Examples 1 and 2, the contents of Zn and Mg in the obtained sintered body were quantitatively analyzed by ICP emission analysis, and it was confirmed that the feed composition when mixing the raw material powders was also determined in the sintered body. maintain. At this time, the values ​​of the specific composition ratios in the sintered body confirmed are shown in FIG. 1 .

[0094] Then, in the same manner as in Examples 1 and...

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Abstract

Disclosed is a target which does not form nodules during sputtering. Also disclosed is an amorphous transparent conductive film which has excellent etching properties and excellent transparency especially in the 400-450 nm region. Specifically disclosed is a sputtering target containing indium oxide, zinc oxide and magnesium oxide, which does not form nodules during sputtering. Also specifically disclosed is an amorphous transparent conductive film containing indium oxide, zinc oxide and magnesium oxide, which is excellent in etching properties and has high light transmittance in the 400-450 nm region.

Description

technical field [0001] The present invention relates to an electrode substrate for liquid crystal driving and an electrode substrate for EL, and particularly to a transparent conductive film constituting a transparent electrode used in these electrode substrates. Moreover, this invention relates to the sputtering target used for manufacturing this transparent conductive film. Background technique [0002] Conventionally, Sn-doped materials have been studied as sputtering targets for transparent conductive films. In particular, ITO (Indium Tin Oxide: Indium Tin Oxide) is widely used. [0003] However, in the case of ITO, in order to lower its specific resistance, it needs to be crystallized. Therefore, it is necessary to form a film at a high temperature, or to perform a predetermined heat treatment after film formation. [0004] In addition, aqua regia (a mixture of nitric acid and hydrochloric acid), which is a strong acid, is used as an etchant during etching of a cryst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08G02F1/1343H01L21/285H01L21/70H01B1/08H01L21/3205H01L23/52H01L31/0224
CPCH01L31/022466C23C14/08H01B1/08C23C14/3414C23C14/34G02F1/1343H01L21/285
Inventor 井上一吉松原雅人笘井重和岛根幸朗
Owner IDEMITSU KOSAN CO LTD