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Semiconductor photoelectric detector chip structure

A photodetector, chip structure technology, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of low dark current stability, poor device stability, complex process implementation, etc., to improve bandwidth and stability. , The process achieves the effect of simple process

Inactive Publication Date: 2008-05-21
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] PIN diodes and APD usually have two schemes in terms of structure design, one is mesa-type structure (mesa-type), and the other is planar-type structure (planar-type), among which mesa-type structure diodes have the advantages of simple fabrication and repeatable fabrication, etc. Advantages: Compared with mesa-type diodes, since planar-type diodes bury the PN junction in the body, it has lower dark current and higher stability, but the process implementation is much more complicated
Whether it is a diode with a mesa structure or a planar structure, in the design of the electrode, you will encounter the problem of how to effectively solve the contradiction between the size of the electrode and the size of the parasitic capacitance: if the electrode design is large, the parasitic capacitance will increase, which will play an important role in the performance of the device. Negative impact; if the electrode design is small, the solder joints will not be firm when designing external circuits, such as making solder joints and wiring, resulting in poor stability of the device
The traditional design scheme requires the growth of nanometer-scale material structures, the design of growth optical waveguides and the design of peripheral circuits and other replication processes, and these processes are relatively difficult for small-sized chips.

Method used

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  • Semiconductor photoelectric detector chip structure
  • Semiconductor photoelectric detector chip structure
  • Semiconductor photoelectric detector chip structure

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Experimental program
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Embodiment 1

[0033] As shown in Figure 2, a kind of semiconductor photodetector chip structure of the present invention, comprises substrate 11, the absorption layer 12 that is stacked on the substrate 11 and the N-type electrode 17 that is stacked under the substrate 11, part of the absorption layer 12 is formed with a P-type heavily doped layer 14, a P-type electrode 16 is arranged on the P-type heavily doped layer 14, and an incident light window 15 is also formed on the P-type heavily doped layer 14, wherein the P-type heavily doped The surrounding of the heterogeneous layer 14 is filled with an insulating material layer 18 , and the P-type electrode 16 extends to the surface of the insulating material layer 18 and covers the surface of the insulating material layer 18 .

[0034] In order to improve the utilization rate of the incident light, an anti-reflection metal film is also formed on the incident light window 15 .

[0035] In this embodiment, the substrate 11 is made of InP mater...

Embodiment 2

[0042] In order to multiply the number of electrons and holes, in this embodiment, a multiplication layer 19 is formed on the structure of embodiment 1, that is, between the P-type heavily doped layer 14 and the absorption layer 12 , as shown in FIG. 3 . This structure can be controlled by the doping concentration of other different layers, so that most of the electric field falls in the multiplication region, which is beneficial for the number of electrons and holes to be multiplied in the multiplication layer 19 and transported in other layers.

Embodiment 3

[0044] In order to absorb incident light more fully, in this embodiment, on the structure of Embodiment 1 or Embodiment 2, a Bragg reflection layer 20 is further formed between the substrate 11 and the absorbing layer 12 , as shown in FIG. 4 .

[0045] Through the resonant cavity formed by the Bragg reflective layer 20, the incident light can be repeatedly reflected and fully absorbed when passing through the structure. In this way, under the premise of ensuring high responsivity, the thickness of the absorbing layer can be reduced to improve the bandwidth characteristics.

[0046] In this embodiment, the optical thickness of the Bragg reflection layer 20 is λ / 4, where λ is the wavelength of the incident light.

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Abstract

The invention discloses a chip structure for semiconductor photodetector, comprising a substrate, a plurality of absorption layers layered on the substrate and an N-type electrode superimposed under the substrate. The invention is characterized in that: part of the absorption layers are formed with a plurality of P-type heavy doping layers; the P-type heavy doping layer is provided with a P-type electrode, and the P-type heavy doping layer is also formed with a laser window; wherein, the surrounding of the P-type heavy doping is filled with an insulation material layer, and the P-type electrode extends to the surface of the insulating material layer and covers the surface of the insulating material layer. The invention has the advantages of effective reduction of the capacitor on the device, good stability and simple technology.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a semiconductor photodetector chip structure. Background technique [0002] Nowadays, optical fiber communication at home and abroad is developing in the direction of high speed, networking and integration. Aiming at the needs of the highly informationized society in the future, following the practicality of the transmission capacity of the 2.5Gb / s system, the 10Gb / s system has also been put into commercial use. The 40Gb / s system is also beginning to be put on the agenda at present. Correspondingly, the ultra-high-speed, high-sensitivity photoelectric detection devices necessary for optical communication systems have also made remarkable progress. [0003] The most commonly used semiconductor photodetectors in optical fiber communication are photodiodes (PINs) and avalanche photodiodes (APDs), both of which have their own characteristics and advantages. Among them, the PI...

Claims

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Application Information

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IPC IPC(8): H01L31/102H01L31/107H01L31/105
Inventor 王钢陈诗育
Owner SUN YAT SEN UNIV