Hydride gas-phase epitaxy apparatus for preparing nitride monocrystalline substrate

Abstract

The invention provides a hydride gas phase epitaxial device of preparing nitride monocrystal substrate, which comprises an epitaxial growth chamber which is vertically arranged; a chassis which are arranged on the upper head face and the lower head face of the epitaxial growth chamber for sealing; a substrate device which is arranged at the upper side in the epitaxial growth chamber with the substrate arranging mode of face downwards; a governor motor which is connected with the substrate device outside the growth chamber to control the speed of the substrate device; a metal reacting source placer which is positioned under the substrate device in the epitaxial growth chamber or outside of a reaction furnace; a reaction gas pipeline which enters into the epitaxial growth chamber through the chassis of the lower head face of the growth chamber, wherein, supporting gas enters into the epitaxial growth chamber through the reaction gas pipeline, carries reaction gas, flows upwards onto the substrate, and conducts a reaction for growing the nitride monocrystal substrate; an outgrowth gathering unit which is connected with an outlet of the epitaxial growth chamber to gather outgrowth of the reaction, thereby preventing the reaction gas pipeline from being blocked; a heating plant which is surrounded with the outer annulus of the epitaxial growth chamber; and an automatic control system for controlling.

Description

technical field [0001] The invention belongs to the field of semiconductor technology, in particular to a simple-to-use, high-reliability vertical hydride vapor phase epitaxy and auxiliary device designed and prepared for growing high-quality, high-uniform nitride single crystal substrate materials. Background technique [0002] The spectrum of nitride multi-system materials is from 0.7ev to 6.2ev, which can be used for interband emission, and the color covers from infrared to ultraviolet wavelengths, not only in optoelectronic applications, such as blue light, green light, ultraviolet light-emitting diode (LED), short Wavelength laser diodes (LD), ultraviolet detectors, Bragg reflection waveguides, etc. have gained important applications and developments, and have also received extensive attention in microelectronic applications, which can produce high-temperature, high-frequency and high-power devices, such as high Electron mobility transistor (HEMT), heterojunction bipola...

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Problems solved by technology

[0003] Before the present invention, the epitaxy device used for the preparation of nitride single crystal substrates existed during the growth: the horizontal furnace was affected by convection, the temperature uniformity was poor, the gas phase was depleted, resulting in low growth uniformity of the thick film nitride material, and the filling metal source was not good. Convenience, poor controllability of metal halide, inconvenient use of reaction furnace, poor repeatability, etc.

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