Hydride gas-phase epitaxy apparatus for preparing nitride monocrystalline substrate

A hydride gas phase, nitride technology, applied in the direction of single crystal growth, chemical reactive gas, crystal growth, etc., can solve the problems of poor temperature uniformity, poor repeatability, poor controllability of metal halides, etc., to reduce the growth cost. , the effect of high growth rate and high reaction efficiency

Inactive Publication Date: 2008-06-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Before the present invention, the epitaxy device used for the preparation of nitride single crystal substrates existed during the growth: the horizontal furnace was affected by convection, the temperature uniformity was poor, the gas ...

Method used

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  • Hydride gas-phase epitaxy apparatus for preparing nitride monocrystalline substrate
  • Hydride gas-phase epitaxy apparatus for preparing nitride monocrystalline substrate
  • Hydride gas-phase epitaxy apparatus for preparing nitride monocrystalline substrate

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Experimental program
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Embodiment 1

[0042] Such as figure 1 Shown is a schematic structural diagram of this embodiment. The device can add a vacuum pump to grow from low pressure to normal pressure. The device consists of epitaxial growth chamber 1, heating device 2, upper and lower chassis 31 and 32, substrate device 4, speed regulating motor 5, metal reaction source placer 6, reaction The gas pipeline 7, the by-product collection device 8, the wet waste gas treatment device 9 and the automatic control system 10 are composed. Wherein, the epitaxial growth chamber 1 is vertically arranged, and the heating device 2 is heated around the outer circumference of the epitaxial growth chamber 1, and the upper and lower ends of the epitaxial growth chamber 1 are equipped with a chassis 31 for sealing; the substrate device 4 enters from above the epitaxial growth chamber 1, and the substrate 15 is placed face down; the substrate device 4 is connected with a speed-regulating motor 5 outside the growth chamber; the metal ...

Embodiment 2

[0045] Such as figure 2 Shown is a schematic structural diagram of the second embodiment. The device can add a vacuum pump to grow from low pressure to normal pressure. The device consists of epitaxial growth chamber 1, heating device 2, upper and lower chassis 31 and 32, substrate device 4, speed regulating motor 5, metal halide reactor 6', The reaction gas pipeline 7, the by-product collection device 8, the wet waste gas treatment device 9 and the automatic control system 10 are composed. Wherein, the epitaxial growth chamber 1 is arranged vertically, the heating system 2 surrounds the outer circumference of the epitaxial growth chamber 1 to heat, and the upper and lower ends of the epitaxial growth chamber 1 are equipped with a chassis 31 for sealing; the substrate device 4 enters from above the epitaxial growth chamber 1, and the substrate 15 is placed face down; the substrate device 4 is connected with a speed-regulating motor 5 outside the growth chamber; the metal rea...

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Abstract

The invention provides a hydride gas phase epitaxial device of preparing nitride monocrystal substrate, which comprises an epitaxial growth chamber which is vertically arranged; a chassis which are arranged on the upper head face and the lower head face of the epitaxial growth chamber for sealing; a substrate device which is arranged at the upper side in the epitaxial growth chamber with the substrate arranging mode of face downwards; a governor motor which is connected with the substrate device outside the growth chamber to control the speed of the substrate device; a metal reacting source placer which is positioned under the substrate device in the epitaxial growth chamber or outside of a reaction furnace; a reaction gas pipeline which enters into the epitaxial growth chamber through the chassis of the lower head face of the growth chamber, wherein, supporting gas enters into the epitaxial growth chamber through the reaction gas pipeline, carries reaction gas, flows upwards onto the substrate, and conducts a reaction for growing the nitride monocrystal substrate; an outgrowth gathering unit which is connected with an outlet of the epitaxial growth chamber to gather outgrowth of the reaction, thereby preventing the reaction gas pipeline from being blocked; a heating plant which is surrounded with the outer annulus of the epitaxial growth chamber; and an automatic control system for controlling.

Description

technical field [0001] The invention belongs to the field of semiconductor technology, in particular to a simple-to-use, high-reliability vertical hydride vapor phase epitaxy and auxiliary device designed and prepared for growing high-quality, high-uniform nitride single crystal substrate materials. Background technique [0002] The spectrum of nitride multi-system materials is from 0.7ev to 6.2ev, which can be used for interband emission, and the color covers from infrared to ultraviolet wavelengths, not only in optoelectronic applications, such as blue light, green light, ultraviolet light-emitting diode (LED), short Wavelength laser diodes (LD), ultraviolet detectors, Bragg reflection waveguides, etc. have gained important applications and developments, and have also received extensive attention in microelectronic applications, which can produce high-temperature, high-frequency and high-power devices, such as high Electron mobility transistor (HEMT), heterojunction bipola...

Claims

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Application Information

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IPC IPC(8): C30B25/00
Inventor 段瑞飞刘喆钟兴儒魏同波马平王军喜曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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