Method for manufacturing an SOI substrate

Abstract

A method for manufacturing an SOI substrate, comprising: an ion implantation process, which is to form a hydrogen ion implantation layer on the main surface side of a silicon substrate; a surface treatment process, which is to at least one of the insulating substrate and the above-mentioned silicon substrate activation treatment on the main surface of the above-mentioned insulating substrate; a bonding process, which is to bond the main surface of the above-mentioned insulating substrate and the main surface of the above-mentioned silicon substrate; The silicon thin film is mechanically peeled off to form a silicon film on the main surface of the insulating substrate, and the temperature of the silicon substrate in the ion implantation process is maintained at 400° C. or lower. The method of the invention can suppress the surface roughness of the stripped SOI film, and ensure that the entire surface of the SOI substrate has a uniform thickness of the SOI film. Since all are low-temperature processes, the occurrence of transfer defects or slip dislocations can be suppressed, and high-quality SOI wafers can be obtained.

Description

technical field [0001] The present invention relates to a method of manufacturing an SOI substrate having a silicon film on an insulating substrate. Background technique [0002] An SOI (Silicon on Insulator) wafer has been valued as a semiconductor substrate capable of improving the performance of a semiconductor device. This is because by adopting the SOI structure and embedding the oxide film under the single crystal silicon thin film, the parasitic capacitance can be reduced, the operation speed can be improved, and the power consumption can be suppressed. However, until now, SOI wafers have not become the mainstream of substrates for manufacturing LSI devices. The reason for this is that the manufacturing cost of an SOI wafer is about several times (or more than several times) that of a normal SOI wafer. [0003] Also, the SOQ (Silicon on Quartz) wafer having a silicon thin film on a quartz substrate is expected to be applied to an optical device (device), such as an ...

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Problems solved by technology

[0007] In other words, in the case of laminating a silicon substrate and a quartz substrate to produce an SOI substrate, there is a problem in that, in order to avoid peeling of the bonded surface due to thermal strain caused by the difference in thermal expansion coefficient between the two substrates, or cracks, etc., requiring low-temperature process; and heat treatment at a relatively high temperature in order to make the entire bonding surface in a good state, these two contradictory problems

However, the SOITEC method cannot solve this problem

In addition, when an inexpensive glass substrate or an organic thin substrate is used as an insulating substrate, since its melting point is low, a low-temperature process is required, and it is difficult to cope with this purpose with a known method that requires a high-temperature process.

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