CMOS image sensor and method for manufacturing the same

Abstract

The invention discloses a CMOS image sensor and method for manufacturing the same. A CMOS image sensor may include a gate electrode on a gate insulating layer in an active region of a semiconductor substrate; a photodiode region in the semiconductor substrate on one side of the gate electrode; a floating diffusion region in the semiconductor substrate on another side of the gate electrode; and a complementary impurity region in the semiconductor substrate on the other side of the gate electrode, overlapping with the floating diffusion region. Embodiments of the invention relate to a CMOS image sensor and a method for manufacturing the same, adapted to make a reset of a photodiode easy as well as to allow the electrons generated from the photodiode to be easily transferred into a floating diffusion region by making the width of a transfer transistor large and / or the area of a floating diffusion region small, thereby improving the characteristics of the image sensor.

Description

technical field [0001] The present invention relates to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] As a semiconductor device that converts an optical image into an electrical signal, most image sensors are generally classified into charge-coupled devices (CCD) and complementary metal oxide (CMOS) image sensors. [0003] A charge-coupled device (CCD) includes: a plurality of vertical charge-coupled devices (VCCDs) formed between respective vertical photodiodes arranged in an array to vertically transfer charges generated by respective photodiodes; a plurality of photodiodes, arranged in an array, to convert light signals into electrical signals; horizontal charge-coupled devices (HCCDs), to horizontally transfer charges transferred by way of respective vertical charge-coupled devices; and sense amplifiers, to sense the horizontally transferred charge and output it as an electrical signal. [0004] However, due to the use of a multi...

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Problems solved by technology

[0004] However, due to the use of multi-level photolithography process, this kind of CCD has the disadvantages of relatively complicated driving method, relatively large power consumption and relatively complicated manufacturing process

[0005] For CCDs, it is also difficult to integrate control circuits, signal processing circuits, and A / D converters on one CCD chip, so CCDs have the disadvantage of making it difficult to miniaturize products.

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