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A high voltage P-type MOS transistor and the corresponding manufacturing method

A semiconductor tube, oxide technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as incompatibility, achieve good compatibility, reduce the longitudinal electric field of the channel, and reduce hot carrier injection effect of phenomenon

Inactive Publication Date: 2008-07-09
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In some specific processes, the gate oxide layer is also strengthened to reduce the defect density and improve the reliability of the device, such as doping F and Cl in the gate oxide layer or replacing silicon dioxide with silicon nitride, etc. However, this method also has the disadvantage of being incompatible with the current common process.

Method used

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  • A high voltage P-type MOS transistor and the corresponding manufacturing method

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Embodiment 1

[0014] A high-voltage P-type metal oxide semiconductor tube, including a P-type substrate 1, a deep N-type well 1A is arranged on the P-type substrate 1, and an N-type well 3 and a P-type drift are arranged on the deep N-type well 1A Region 2, N-type contact hole 6, P-type source 5 and field oxide layer 71 are provided on N-type well 3, P-type drain 4 and field oxide layer 72 are provided on P-type drift region 2, and N-type well 3. A gate oxide layer is provided above the P-type drift region 2 and part of the deep N-type well 1A, and the gate oxide layer is located between the P-type source 5 and the field oxide layer 72 on the P-type drift region 2. On the gate oxide layer A polysilicon gate 8 is provided on it, and the polysilicon gate 8 extends to the field oxide layer 72 on the P-type drift region 2. On the field oxide layer 71, the N-type contact hole 6, the P-type source 5, the polysilicon gate 8, and the field oxide layer 72 And the P-type drain 4 is provided with an o...

Embodiment 2

[0016] A method for preparing a high-voltage P-type metal oxide semiconductor tube. First, select a P-type substrate, prepare a deep N-type well on the P-type substrate, prepare an N-type well and a P-type drift region on the deep N-type well, and then Preparation of field oxide layer, followed by growth and etching of thick gate oxide layer, after that, growth of thin gate oxide layer, followed by growth and etching of polysilicon gate, preparation of source and drain implantation regions and substrate contact implantation area, and finally the lead holes, the preparation and passivation of aluminum leads. The entire process can be realized on the basis of standard epitaxial low-voltage metal-oxide-semiconductor process lines.

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Abstract

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly. The invention further discloses a preparation method of the high-voltage P-type metal oxide semiconductor. The invention has the advantages that the invention can greatly reduce the hot carrier injection phenomenon of a beak region and improve the overall service life of the device; the start voltage, saturated current and other basic electrical characteristics of the device can be ensured to be in line with a general structure device; the substrate current of the device is greatly reduced, the reliability of the device is further improved; thus the invention has better compatibility.

Description

technical field [0001] The invention relates to a high-voltage P-type metal oxide semiconductor tube and a preparation method thereof, in particular to a high-voltage P-type metal oxide semiconductor tube with high reliability and reduced hot carrier effect and a preparation method thereof. Background technique [0002] In power integrated circuits, high-voltage drive tubes usually work under high-voltage conditions, and the lateral electric field and current density in the device channel are much larger than other devices. Therefore, the hot carrier effect is an inevitable problem in the design of high-voltage drive tubes. The main factor affecting the reliability of the device, especially the current has been in silicon and silicon dioxide (Si, SiO 2 ) Lateral double-diffused metal-oxide-semiconductor transistor (LDMOSFET) with interfacial flow. At present, most of the solutions to the hot carrier effect of metal oxide semiconductor tubes (MOSFET) are aimed at the metal o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L21/28
Inventor 鲍嘉明贾侃李海松孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV
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