Industrial production system for producing high-silicon strip with magnetron sputtering continuous two-sided codeposition process

A magnetron sputtering and production system technology, applied in sputtering coating, metal material coating process, ion implantation plating, etc., to achieve high work efficiency and easy control of process parameters

Inactive Publication Date: 2008-12-10
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The industrialized production system of continuous double-sided co-deposition silicon-making materials proposed by the present invention solves the defect that the existing commercial Fe-6.5wt% Si silicon steel sheet is basically made by chemical vapor deposition method

Method used

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  • Industrial production system for producing high-silicon strip with magnetron sputtering continuous two-sided codeposition process
  • Industrial production system for producing high-silicon strip with magnetron sputtering continuous two-sided codeposition process
  • Industrial production system for producing high-silicon strip with magnetron sputtering continuous two-sided codeposition process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] Fe-6.5wt% Si high-silicon steel strip is prepared on a 0.20mm thick Fe-3.0wt% Si low-silicon steel strip

[0070] A silicon material with a purity of 99.9% was deposited on the upper and lower sides of a 0.20mm thick Fe-3.0wt%Si low silicon steel strip, and the thickness of the deposited silicon material was 15 μm.

[0071] The conditions for the industrial production of high silicon steel strip by magnetron sputtering double-sided co-deposition are as follows:

[0072]

[0073] The processing steps of magnetron sputtering double-sided co-deposition for industrial production of high silicon steel strip include:

[0074] Step 1: Prepare the silicon target

[0075] The target material is polysilicon, the thickness is 6mm×the length is 300mm×the width is 300mm, and the size of the target material is compatible with the size of the boss 161 set in the cathode cap 106;

[0076] Step 2: Install the silicon steel belt

[0077] One end of the 0.20mm thick Fe-3.0wt%Si low-silicon ...

Embodiment 2

[0085] Fe-6.5wt%Si high-silicon steel strip prepared on 35WW270 low-silicon steel strip

[0086] A silicon material with a purity of 99.9% was deposited on the upper and lower sides of the 35WW270 low silicon steel strip, and the thickness of the deposited silicon material was 20 μm.

[0087] The conditions for the industrial production of high silicon steel strip by magnetron sputtering double-sided co-deposition are as follows:

[0088]

[0089] The processing steps of magnetron sputtering double-sided co-deposition for industrial production of high silicon steel strip include:

[0090] Step 1: Prepare the silicon target

[0091] The target material is polysilicon, the thickness is 6mm×the length is 300mm×the width is 300mm, and the size of the target material is compatible with the size of the boss 161 set in the cathode cap 106;

[0092] Step 2: Install the silicon steel belt

[0093] Install one end of the 35WW270 low-silicon steel strip on the uncoiler 2, and install the o...

Embodiment 3

[0101] High-silicon steel belt made on 35WW440 low-silicon steel belt

[0102] Silicon material with a purity of 99.9% was deposited on the upper and lower sides of the 35WW440 low-silicon steel strip, and the thickness of the deposited silicon material was 20 μm.

[0103] The conditions for the industrial production of high silicon steel strip by magnetron sputtering double-sided co-deposition are as follows:

[0104]

[0105] The processing steps of magnetron sputtering double-sided co-deposition for industrial production of high silicon steel strip include:

[0106] Step 1: Prepare the silicon target

[0107] The target material is polysilicon, the thickness is 6mm×the length is 300mm×the width is 300mm, and the size of the target material is compatible with the size of the boss 161 set in the cathode cap 106;

[0108] Step 2: Install the silicon steel belt

[0109] Install one end of the 35WW440 low-silicon steel strip on the uncoiler 2, and install the other end on the coil...

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Abstract

The invention discloses an industrialized production system for making a high-silicon steel strip by a process of magnetron sputtering continuous double-sided codeposition. The industrialized production system of a high-silicon silicon plate comprises a welding machine (3), a preheating chamber (4), a magnetron sputtering chamber (1), a diffusion chamber (5), a cooling chamber (6), and a coiler (7), which are sequentially arranged on a production line starting from the deliverty of the low-silicon silicon plate to the production system by an unwinding coiler (2) to the finish of the production of high-silicon silicon plate. The industrialized production system for making the silicon material by the process of the continuous double-sided codeposition, driven by the unwinding coiler (2), is capable of performing deposition on a the low-silicon silicon plate with a thickness of less than 0.35mm with silicon content of between 5 and 8 weight percent to by means of symmetrically disposing a plurality of cathode targets in the magnetron sputtering chamber, thereby achieving the aim of continuous deposition of silicon material with low energy consumption and high production efficiency. The industrialized production system solves the defect that the silicon plate of the commercialized Fe-6.5 weight percentage Si can only be produced by adopting a method of chemical gas-phase deposition.

Description

Technical field [0001] The present invention relates to a process for industrially producing high-silicon silicon steel thin plates, and more particularly, to a continuous double-sided co-deposition process using magnetron sputtering, which sputters silicon materials on top and bottom of low-silicon silicon steel simultaneously. Diffusion makes it an industrialized production system for high-silicon silicon steel sheet. Background technique [0002] The principle of magnetron sputtering: charged ions and electrons accelerate under the action of the electric field between the cathode and anode to obtain high enough energy and collide with argon molecules, ionizing a large number of argon ions and electrons. The argon ions accelerate the bombardment of the cathode target under the action of the electric field, sputtering a large number of target atoms to deposit on the substrate to form a film. The secondary electrons are affected by the Loren magnetic force of the magnetic field w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/54
Inventor 毕晓昉田广科
Owner BEIHANG UNIV
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