Semiconductor device and method for manufacturing
A technology of semiconductors and field effect transistors, applied in the field of semiconductor devices and their manufacturing, can solve problems such as difficulty in forming high-performance transistors
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no. 1 example
[0070] attached figure 1 is a schematic cross-sectional view showing the semiconductor device according to the first embodiment.
[0071] For example, an element isolation insulating film 11 for isolating an active region is formed by an STI (Shallow Trench Isolation) method on a silicon semiconductor substrate 10 having a channel formation region. Further, an insulating film I including an offset spacer 15 , a silicon nitride film (sidewall spacer) 17 a and an interlayer insulating film 20 is formed on the semiconductor substrate 10 .
[0072] For example, a gate electrode trench A is formed in the insulating film 1, and a gate insulating film 21 including a hafnium oxide film or an aluminum oxide film having a higher dielectric constant than silicon oxide is formed at the bottom of the gate electrode trench A. , that is, high-k film, or silicon oxide film. Furthermore, the gate electrode 22 is formed on the gate insulating film 21 by filling the gate electrode trench A wit...
no. 2 example
[0134] The semiconductor device according to the second embodiment of the present invention is basically the same as the first embodiment.
[0135] A method of manufacturing a semiconductor device according to this embodiment is described with reference to the drawings.
[0136] First, as attached Figure 7A As shown, an element isolation insulating film 11 is formed by an STI method for isolating an active region in a silicon semiconductor substrate 10 having a channel formation region. Next, silicon oxide is deposited to a thickness of about 4 nm on the entire surface by a thermal oxidation method. In addition, polysilicon and silicon nitride are deposited by the CVD method, and photolithographic etching is performed on the region other than the gate formation region to deposit the dummy gate insulating film 12, the dummy gate electrode 13 made of polysilicon, and the dummy gate electrode 13 made of silicon nitride. hard mask layer 14 .
[0137] Next, silicon nitride is d...
no. 3 example
[0152] Figure 9 is a cross-sectional view of the semiconductor device according to the third embodiment.
[0153] This embodiment is basically the same as the first embodiment except that each offset spacer 15 remains as a laminated layer of a silicon nitride film 15a and a silicon oxide film 15b. Other parts are the same as the first embodiment.
[0154] A method of manufacturing a semiconductor device according to this embodiment will be described with reference to the drawings.
[0155] First, if Figure 10A As described, the same steps as in the second embodiment are performed until the dummy gate electrode 13 (and hard mask layer 14 ) is removed.
[0156] Next, if Figure 10B Said, for example, the thickness of the silicon nitride film 15a constituting each offset spacer 15 is controlled to such a thickness that when the gate insulating film is removed by the same etching method or DHF treatment as in the first embodiment, 12, the silicon nitride film is not complet...
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