Method for manufacturing different-plane metal hollow fine needle for transdermal drug administration
A technology of transdermal drug delivery and production method, which is applied in the field of medical devices, can solve problems such as complex processes, and achieve the effects of simple process, easy penetration into the skin, and cost reduction
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Embodiment 1
[0022] 1. Substrate preparation. Prepare a (100) double-polished silicon oxide wafer with a thickness of 500 μm, in which SiO 2 The thickness is about 2 to 3 μm.
[0023] 2. Throw glue on the front. Bake the substrate at 180°C for 2 to 3 hours, and shake the positive glue by 5 μm.
[0024] 3. Photolithography development. Utilize a mask plate with the target pattern prepared, expose under UV, and open a square photoresist window with a side length of 400 μm after development.
[0025] 4. Etching SiO2 2 . Protect the backside by spinning the glue, and bake the chip at 135°C for 1 hour, so that the photoresist will not fall off in the BHF solution. Using the positive resist as a mask, BHF etching solution (formulation: HF:H 2 O: NH 4 F=28ml: 170ml: 113g) Etching SiO 2 , out of a width of 400μm square SiO 2 window.
[0026] 5. Remove the photoresist. Ultrasonic cleaning in acetone for 5 minutes to remove the photoresist used as a mask, because the photoresist will dis...
Embodiment 2
[0034] 1. Substrate preparation. Prepare a (100) double-polished silicon oxide wafer with a thickness of 500 μm, in which SiO 2 The thickness is about 2 to 3 μm.
[0035] 2. Throw glue on the front. Bake the substrate at 180°C for 2 to 3 hours, and shake the positive glue by 5 μm.
[0036] 3. Photolithography development. Utilize a mask plate with a target pattern already prepared, expose under UV, and open a square photoresist window with a side length of 400 μm after development.
[0037] 4. Etching SiO2 2 . Protect the backside by spinning the glue, and bake the chip at 135°C for 1 hour, so that the photoresist will not fall off in the BHF solution. Using the positive resist as a mask, BHF etching solution (formulation: HF:H 2 O: NH 4 F=28ml: 170ml: 113g) Etching SiO 2 , out of a width of 400μm square SiO 2 window.
[0038] 5. Remove the photoresist. Ultrasonic cleaning in acetone for 5 minutes to remove the photoresist used as a mask, because the photoresist wi...
Embodiment 3
[0046] 1. Substrate preparation. Prepare a (100) double-polished silicon oxide wafer with a thickness of 500 μm, in which SiO 2 The thickness is about 2 to 3 μm.
[0047] 2. Throw glue on the front. Bake the substrate at 180°C for 2 to 3 hours, and shake the positive glue by 5 μm.
[0048] 3. Photolithography development. Utilize a mask plate with a target pattern already prepared, expose under UV, and open a square photoresist window with a side length of 400 μm after development.
[0049] 4. Etching SiO2 2 . Protect the backside by spinning the glue, and bake the chip at 135°C for 1 hour, so that the photoresist will not fall off in the BHF solution. Using the positive resist as a mask, BHF etching solution (formulation: HF:H 2 O: NH 4 F=28ml: 170ml: 113g) Etching SiO 2 , out of a width of 400μm square SiO 2 window.
[0050] 5. Remove the photoresist. Ultrasonic cleaning in acetone for 5 minutes to remove the photoresist used as a mask, because the photoresist wi...
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