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Solar cell and method of manufacturing the same

A technology of solar cells and electrodes, applied in circuits, photovoltaic power generation, electrical components, etc.

Inactive Publication Date: 2009-01-14
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the passivation effect of the silicon nitride layer surface is less than that of the thermal oxide layer

Method used

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  • Solar cell and method of manufacturing the same
  • Solar cell and method of manufacturing the same

Examples

Experimental program
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Effect test

example 1

[0094] On one side of a boron-doped p-type silicon substrate (resistivity: 1Ω·cm), a 0.45 μm-thick emitter layer having phosphorous-doped n-type silicon was arranged. Boron at 1.5 x 10 16 / cm 3 amount doped into the p-type silicon substrate. The surface resistance of the emitter layer including n-type silicon was 50Ω per square.

[0095] Then, a conductive transparent electrode layer with a thickness of 80 nm was arranged on the emitter layer by sputtering.

[0096] An Al-containing paste was screen printed onto the other side of the p-type silicon substrate (ie, the side without the emitter layer). In addition, a p-type silicon substrate with a conductive transparent electrode layer was screen-printed with Ag-containing paste every 6 mm to form a pattern, and then sintered at 400 °C for 30 seconds to simultaneously (or parallel) form the first and second electrode, and then prepare a solar cell.

[0097] The emitter layer at the corners of the solar cell is laser removed...

example 2

[0099] On one side of a boron-doped p-type silicon substrate (resistivity: 1Ω·cm), a 0.3 μm-thick emitter layer with phosphorus-doped n-type silicon was arranged. Here, boron in 1.5×10 16 / cm 3 The amount is doped on the p-type silicon substrate. The surface resistance of the emitter layer including n-type silicon was 100Ω per square.

[0100] Then, on this emitter layer, an 80 nm-thick conductive transparent electrode layer was arranged using indium tin oxide (ITO) by a sputtering method.

[0101] Next, an Al-containing paste was screen printed on the other side of the p-type silicon substrate (ie, the side without the emitter layer). In addition, the p-type silicon substrate with the conductive transparent electrode layer was screen-printed with Ag-containing paste every 2.5 mm to form a pattern, and then fired at 400° C. for 30 seconds to simultaneously (or in parallel) ) to form the first and second electrodes, and then prepare a solar cell.

[0102] The emitter layer...

example 3

[0104] On one side of a boron-doped p-type silicon substrate (resistivity: 1Ω·cm), a phosphorous-doped n-type silicon emitter layer of 0.3 μm thick was arranged. Here, boron in 1.5×10 16 / cm 3 The amount is doped on the p-type silicon substrate. The surface resistance of the emitter layer including n-type silicon was 100Ω per square.

[0105] Then, on this emitter layer, an 80 nm-thick conductive transparent electrode layer was arranged using indium tin oxide (ITO) by a sputtering method.

[0106] An Al-containing paste was screen printed on the other side of the p-type silicon substrate (ie, the side without the emitter layer). In addition, the p-type silicon substrate with the conductive transparent electrode layer was screen-printed with Ag-containing paste every 6 mm to form a pattern, and then fired at 400° C. for 30 seconds to simultaneously (or in parallel) The first and second electrodes are formed to finally produce a solar cell.

[0107] The emitter layer at the...

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Abstract

A solar cell having a high photoelectric efficiency by minimizing (or reducing) electron transfer resistance and electrode shading loss. The solar cell includes a semiconductor substrate; an emitter layer on a first side of the semiconductor substrate; a conductive transparent electrode layer on the emitter layer; a first electrode on the conductive transparent electrode layer and electrically connected to the conductive transparent electrode layer; and a second electrode on a second side of the semiconductor substrate and electrically connected to the semiconductor substrate. The conductive transparent electrode layer has a specific resistance of about 500[mu] CR m or less. The emitter layer may be doped with a low concentration of impurities resulting in improve optical response at a short wavelength and minimization (or reduction) of recombination loss.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof. Background technique [0002] A solar cell generates electricity when electrons move to an n-type semiconductor while holes move to a p-type semiconductor due to an electric field generated by a p-n junction. Electrons and holes are generated inside the semiconductor due to energy provided by external light. [0003] Solar cells can be made as crystalline silicon solar cells, which include thin single crystals, polycrystalline and polycrystalline films. However, this type of solar cell has a problem in that defects on the surface and inside of silicon act as recombination centers for electron and hole pairs generated by external light, resulting in poor photoelectric efficiency. [0004] Defects in silicon can be passivated by forming a thermal oxide layer on its surface. Here too, the thermal oxide layer can function as an antireflection coating. Thus, various antireflection f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/0224H01L31/18
CPCH01L31/1884H01L31/022466Y02E10/52Y02E10/50H01L31/0224H01L31/04H01L31/06H01L31/18
Inventor 文仁植金大园
Owner SAMSUNG SDI CO LTD
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