Method for producing solar blind ultraviolet detector
A UV detector, solar blind technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as no absorption, and achieve the effect of good repeatability and high application value
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[0010] Example 1
[0011] On MOCVD equipment, C-plane sapphire was used as the substrate, MgZnO was used as the magnesium source, diethylzinc as the zinc source, and the carrier gas was 99.9999% high-purity nitrogen, and a single cubic phase MgZnO film was prepared according to the following process conditions:
[0012] The substrate temperature is 450℃, and the vacuum degree of the growth chamber is 2×10 4 Pa, the oxygen flow is 550ml / min (pressure 2.5×10 5 Pa), through flow control, the molar concentration ratio of Zn and Mg in the growth chamber is Zn / Mg=0.4, and the structural formula is Mg 0.7 Zn 0.3 O alloy film.
[0013] On the alloy film, an Au film is evaporated by thermal evaporation, and the Au film is etched by a traditional wet etching process to prepare an interdigitated electrode, that is, Mg is obtained. 0.7 Zn 0.3 O MSM structure solar blind ultraviolet detector.
[0014] By this layer of Mg 0.7 Zn 0.3 The O thin film was characterized by XRD, and a si...
Example Embodiment
[0015] Example 2
[0016] On MOCVD equipment, C-plane sapphire was used as the substrate, MgZnO was used as the magnesium source, diethylzinc as the zinc source, and the carrier gas was 99.9999% high-purity nitrogen, and a single cubic phase MgZnO film was prepared according to the following process conditions:
[0017] The substrate temperature is 450℃, and the vacuum degree of the growth chamber is 2×10 4 Pa, the oxygen flow is 550ml / min (pressure 2.5×10 5 Pa), through flow control, the molar concentration ratio of Zn and Mg in the growth chamber is Zn / Mg=0.65, and the structural formula is Mg 0.52 Zn 0.48 O alloy film.
[0018] On the alloy film, an Au film is evaporated by thermal evaporation, and the Au film is etched by a traditional wet etching process to prepare an interdigitated electrode, that is, Mg is obtained. 0.52 Zn 0.48 O MSM structure solar blind ultraviolet detector.
[0019] by Mg 0.52 Zn 0.48 The O thin film was characterized by XRD, and a single di...
Example Embodiment
[0020] Example 3
[0021] On MOCVD equipment, C-plane sapphire was used as the substrate, MgZnO was used as the magnesium source, diethylzinc as the zinc source, and the carrier gas was 99.9999% high-purity nitrogen, and a single cubic phase MgZnO film was prepared according to the following process conditions:
[0022] The substrate temperature is 450℃, and the vacuum degree of the growth chamber is 2×10 4 Pa, the oxygen flow is 550ml / min (pressure 2.5×10 5 Pa), through flow control, the molar concentration ratio of Zn and Mg in the growth chamber is Zn / Mg=1, and the structural formula is Mg 0.5 Zn 0.5 O alloy film.
[0023] On the alloy film, an Au film is evaporated by thermal evaporation, and the Au film is etched by a traditional wet etching process to prepare an interdigitated electrode, that is, Mg is obtained. 0.52 Zn 0.48 O MSM structure solar blind ultraviolet detector.
[0024] by Mg 0.5 Zn 0.5 The O thin film was characterized by XRD, and a single diffracti...
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