Method for preparing nano CMOS integrated circuit by SiN masking technique

Abstract

The invention discloses a method based on SiN masking technique for fabricating a nano-scale CMOS integrated circuit. The process includes the following steps: fabricating an N / P well and growing a Poly-Si / SiN / Poly-Si multi-layer structure on the N / P well; etching the top layer of Poly-Si into a window and then depositing a layer of SiN; etching away the SiN on the surface of the substrate, exceptthe SiN at the side wall of the Poly- Si; based on the etching ratio of Poly-Si to SiN(11:1), etching the Poly-Si on the surface of SiN; etching the SiN on surface of the substrate, except the SiN onthe side wall of the SiN so as to expose the substrate of Poly-Si; based on the etching ratio of Poly-Si to SiN, etching the Poly-Si, except the Poly-Si in the protective area on the side wall of SiNsoas to form an n / p MOSFET grid, and depositing a layer of SiO2 at the well area; injecting ions, self-aligning, and forming the source area and the drain area of the n / p MOSFET grid so as to form an n / p MOSFET device; and photoetching interconnection lines of the device so as to form a CMOS integrated circuit with a conducting channel at 45-90nm. The method can fabricate a CMOS integrated circuit which is improved in performance by 3-5 generations on a micron-scale Si integrated circuit processing platform without adding any funds and equipment investment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a method for manufacturing nanoscale Si integrated circuits by using the existing micron-scale Si integrated circuit manufacturing process. Background technique [0002] The information industry is the pillar industry of the national economy, and it serves all fields of the national economy. Microelectronics technology is the key to the information industry, and integrated circuits are the key among the keys. Since the advent of integrated circuits in 1958, they have developed at an astonishing speed. They have become the core of information science and technology, the cornerstone of national economic development and national defense construction, and have had a huge impact on world politics, economy and culture. As the fastest-growing, most influential, and most widely used technology in human history, integrated circuits have become an impo...

AI Technical Summary

Problems solved by technology

After years of accumulation, the world has invested more than one trillion US dollars in equipment and technology in the microelectronics industry. If the process technology is improved only through the replacement of equipment, a generation of equipment will be eliminated every 18 months, which will cause huge losses. The waste of resources and energy leads to an increase in production costs. Therefore, this situation seriously restricts the development of the semiconductor industry

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