Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED with coarsing interface and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as application limitations, uneven distribution of roughened surfaces, and inability to effectively improve external quantum efficiency.

Active Publication Date: 2009-04-15
XIAMEN CHANGELIGHT CO LTD
View PDF1 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, U.S. Patent No. US6411403 discloses a technology of epitaxial growth, which directly forms a roughened surface and significantly improves the luminous efficiency. However, this technology is only applicable to specific materials, such as aluminum indium gallium nitride, so this technology applications are limited
In addition, the distribution of the roughened surface is uneven, so the external quantum efficiency cannot be effectively improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED with coarsing interface and manufacturing method thereof
  • LED with coarsing interface and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] First provide a substrate 2-1;

[0035] Then use known techniques, such as metalorganic chemical vapor epitaxy (MOCVD), molecular beam epitaxy (MBE), etc. to grow into a light-emitting structure 2-2;

[0036] The first electrode 2-3 is formed on the light-emitting structure 2-2 by means of vapor deposition or sputtering (known technology) to plate gold beryllium and nickel.

[0037] Then use a rapid heat treatment method to fuse the first electrode 2-3 and the light-emitting structure 2-2 at high temperature, the heat treatment temperature is 400-800°C, and the time is 1-2 minutes;

[0038] The fused wafer is subjected to exposure, development, and etching processes (known technology), and the etching is wet etching, and the etching solution includes: one or more of chemical preparations such as iodine, potassium iodide, nitric acid, hydrochloric acid, sulfuric acid, and hydrofluoric acid Composition, etch out the light-emitting region, and then obtain the roughened in...

Embodiment 2

[0041] First, a substrate 2-1 is provided.

[0042] Then, the light-emitting structure 2-2 is grown by using known techniques, such as metalorganic chemical vapor epitaxy (MOCVD), molecular beam epitaxy (MBE), and the like.

[0043] Gold beryllium and nickel are plated by evaporation or sputtering to form the first electrode 2-3 on the light emitting structure 2-2.

[0044] Then, the first electrode 2-3 and the light-emitting structure 2-2 are fused at high temperature by conventional heat treatment. The heat treatment temperature is 400-800°C, and the time is 15-20 minutes.

[0045] The fused wafer is subjected to exposure, development, and etching processes, and the etching is wet etching. The etching solution contains: one or more of chemical agents such as iodine, potassium iodide, nitric acid, hydrochloric acid, sulfuric acid, and hydrofluoric acid. The light-emitting area, and then the roughened interface 2-4 is obtained.

[0046] Finally, gold germanium and nickel ar...

Embodiment 3

[0048] First, a substrate 2-1 is provided.

[0049] Then, the light-emitting structure 2-2 is grown by using known techniques, such as metalorganic chemical vapor epitaxy (MOCVD), molecular beam epitaxy (MBE), and the like.

[0050] Gold beryllium is plated by evaporation or sputtering to form a first electrode 2-3 on the light emitting structure 2-2.

[0051] Then, the first electrode 2-3 is fused with the light emitting structure 2-2 at high temperature by means of rapid heat treatment. The heat treatment temperature is 400-800°C, and the time is 1-2 minutes.

[0052] The fused wafer is subjected to exposure, development, and etching processes, and the etching is wet etching. The etching solution contains: one or more of chemical agents such as iodine, potassium iodide, nitric acid, hydrochloric acid, sulfuric acid, and hydrofluoric acid. The light-emitting area, and then the roughened interface 2-4 is obtained.

[0053] Finally, gold germanium and nickel are plated on th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an interface coarsened LED and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate; forming a luminous structure on the substrate; forming a first electrode on the luminous structure; and integrating the luminous structure with the first electrode; etching a luminous zone with a coarsened interface by exposing, developing and etching on the luminous structure; and forming a second electrode on the other side of the substrate. The coarsened interface of the LED can increase the light emitting area and causes the light ray which experiences total reflection to be emitted to the interface with a different angle next time, which greatly improves the release efficiency, the light extraction efficiency and the brightness. Furthermore, the technology of the interface coarsened LED and the manufacturing method is applicable to various materials without limitation on application, and the coarsened interface has evener distribution, which can effectively enhance the external quantum efficiency.

Description

technical field [0001] The invention relates to a high-brightness light-emitting diode, in particular to a light-emitting diode with a roughened interface and a manufacturing method thereof. Background technique [0002] At present, light-emitting diodes have been widely used in economic life such as display, decoration, and communication. The general structure is as figure 1 As shown, it includes a substrate 1-1, a light emitting structure 1-2, a first electrode 1-3, and a second electrode 1-5. By using different semiconductor materials and structures, light-emitting diodes can cover a full color range from ultraviolet to infrared, and their luminous efficiency and brightness are continuously improved. [0003] The improvement of the luminous efficiency of light-emitting diodes has always been the goal of technology. Improving the quality of epitaxial materials, reducing the absorption of gallium arsenide substrates through Bragg reflectors, bonding transparent substrates...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/22
Inventor 黄尊祥杨凯李涛彭绍文
Owner XIAMEN CHANGELIGHT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com