Double-layer reflection-decreasing film for silicon solar cell and preparation method thereof
A silicon solar cell and anti-reflection technology, which is applied in the field of solar cells, can solve the problems of not being able to enter the cell, reflection loss, etc., and achieve the effects of process and equipment simplification, cell efficiency improvement, and high economic benefits
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[0016] see figure 1 The silicon solar cell double-layer anti-reflection film involved in the present invention is to deposit a layer of silicon nitride film 2.1 on the front surface of a silicon wafer substrate 1, and then deposit a layer of silicon dioxide film 2.2 on the silicon nitride film 2.1 to form Silicon nitride / silicon dioxide double-layer reflective film 2. The technological process of its preparation is:
[0017] Step 1. On the silicon wafer substrate 1 after texturing, utilize plasma enhanced chemical vapor deposition (PECVD), adopt SH 4 and NH 3 as the reaction source, SiH 4 with NH 4 Reaction, deposit a layer of silicon nitride film 2.1, the thickness of this layer of silicon nitride film 2.1 is 110nm. The substrate temperature of the silicon wafer is 400°C, the power of the high frequency power supply is 500W, the frequency of the high frequency power supply is 13.56mHz, SiH 4 Flow 500sccm (standard cubic centimeter per minute), NH 3 Flow 5000sccm.
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